IV-VI Semiconductor Multi-Junction TPV Devices
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current thermophotovoltaic (TPV) devices using III-V semiconductor materials are limited in capturing electromagnetic radiation beyond infrared wavelengths, suffer from efficiency losses due to cell heating, and are expensive to manufacture, requiring spectral filtering and having lower heat-to-electricity conversion efficiencies.
Innovation Solution
A multi-junction TPV device comprising a IV-VI semiconductor structure with stacked junctions, each with a different bandgap, configured to capture electromagnetic radiation from 1 μm to 7 μm, and a tunnel junction for series connection, allowing efficient absorption of infrared radiation without the need for spectral filtering, reducing cell heating, and lowering manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If III-V semiconductor materials are used in TPV devices, then the devices can be manufactured with current technology, but the heat-to-electricity conversion efficiency is limited to around 5.1% and the wavelength capture is restricted to up to 2.20 μm
Solution Approach 1:
The patent changes the material parameter from conventional III-V semiconductors to IV-VI semiconductor alloys (such as Pb1-xSrxSe, Pb1-ySnyTe, Pb1-zInzTe), which fundamentally alters the bandgap characteristics and enables absorption of longer wavelength infrared radiation while maintaining manufacturability through established semiconductor growth techniques
Solution Approach 2:
The patent employs composite semiconductor alloy structures with multiple elements (Pb, Sr, Se, Sn, Te, In) to create materials with tailored optical and electrical properties that optimize both efficiency and manufacturability
2Manufacturing precision
If spectral filtering devices are added to III-V TPV devices, then the wavelength selectivity is improved, but the device complexity and manufacturing cost increase
Solution Approach 1:
The patent extracts the wavelength selectivity function from separate spectral filtering components and integrates it directly into the semiconductor absorber material itself, eliminating the need for external filters while maintaining precise wavelength selection through material bandgap engineering
Solution Approach 2:
The semiconductor material simultaneously performs multiple functions: it acts as both the electrical energy converter and the spectral selector, combining the roles of photovoltaic absorber and wavelength filter in a single component
3Temperature
If conventional TPV devices operate at high temperatures, then the thermal radiation emission is sufficient, but cell heating causes efficiency losses
Solution Approach 1:
The patent applies selective bandgap engineering to different regions of the semiconductor structure, creating zones with optimized electrical and optical properties that enable efficient energy conversion while managing thermal effects locally within the material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The IV-VI semiconductor TPV devices achieve higher power generation densities, exceed 50% radiated heat-to-electricity conversion efficiency, and are more environmentally friendly, capable of capturing a broader electromagnetic spectrum, reducing physical footprint, and operating without spectral filtering systems.
Implementation Method 1
A thermophotovoltaic (TPV) device configured to absorb electromagnetic radiation and convert said absorbed radiation into electricity
Implementation Method 2
a first tunnel junction between said first and second junctions and electrically connecting said first and second junctions in series
Data Source
AI summary
Novel materials, material deposition methods, and devices used to generate electrical power from thermal radiators based on thermophotovoltatic (TPV) operating principles using group IV-VI alloys and materials are disclosed. A semiconductor structure comprising (N) stacked junctions, each junction formed of a IV-VI semiconductor alloy and each of said N junctions having a bandgap, where N is an integer and N>1 is disclosed. The semiconductor structure is configured to capture electromagnetic radiation having wavelengths from about 1 μm to about 7 μm. TPV devices comprising the novel semiconductor structure and methods of making the novel structures and devices are also disclosed.