Jet Ablation Die Singulation to Prevent Chipping and Cracking

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Solution Overview

Problem

Traditional singulation methods for semiconductor substrates, such as sawing, induce die chipping and cracking, which can lead to reduced yield and device reliability due to the stress and breakage during handling and processing.

Innovation Solution

A method involving forming a pattern in a back metal layer on a semiconductor substrate, etching substantially through the substrate thickness at the pattern, and then jet ablating a layer of passivation material from the opposite side to singulate the semiconductor die, thereby avoiding the stress and breakage associated with sawing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If traditional sawing methods are used for singulation, then the singulation process can be completed, but die chipping and cracking occur reducing yield and reliability

Engineering Contradiction:
Improvesingulation completionVSAvoiddie strength
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent replaces the traditional mechanical sawing system with a jet ablation system that uses high-velocity fluid jets to remove material. This substitution eliminates mechanical contact between the saw blade and the semiconductor substrate, thereby preventing die chipping and cracking while maintaining singulation effectiveness

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent employs hydraulic jet ablation technology where high-pressure fluid jets (typically water-based) are directed at the semiconductor substrate to erode and remove material along the singulation lines. This pneumatic-hydraulic approach replaces mechanical cutting forces with fluid dynamic forces, achieving stress-free singulation

Inventive Principle:
Principle #29Pneumatics and hydraulics

2Reliability

If jet ablation is used to singulate die, then die strength and yield are enhanced, but the process complexity increases

Engineering Contradiction:
Improvedie strengthVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The singulation process is divided into distinct sequential steps: first forming a pattern in the back metal layer, then etching through the substrate at the pattern locations, and finally jet ablating the passivation material from the opposite side. This segmentation allows each step to be optimized independently and simplifies the overall process control

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary patterning and etching of the back metal layer before applying jet ablation to the passivation material. This preliminary action creates precise etch holes that guide the jet ablation process, ensuring accurate singulation while reducing the complexity of the jet ablation step itself

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively singulates semiconductor die without inducing chipping or cracking, enhancing die strength and yield by reducing the stress and breakage associated with traditional sawing processes.

Implementation Method 1

jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die

Methodology Applied
Scientific EffectJet ablation: Ablation

Implementation Method 2

Etching substantially through the thickness of the semiconductor substrate further includes plasma etching

Methodology Applied
Scientific EffectPlasma etching: Plasma

Data Source

PatentUS20250062162A1Jet ablation die singulation systems and related methods
Publication Date: 2025.02.20 SEMICON COMPONENTS IND LLC
  • US20250062162A1 patent drawing
  • US20250062162A1 patent drawing
  • US20250062162A1 patent drawing

AI summary

Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.