Integrated JFET Sidewall Structure for High-Voltage Low On-Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High-power semiconductor devices require transistors with high voltage tolerance, low on-resistance, and high power handling capacity, which existing technologies struggle to achieve effectively, especially in high voltage applications.
Innovation Solution
A semiconductor device design incorporating a semiconductor layer, epitaxial layer, source regions, sidewall body regions, gate regions, and link regions of specific conductivity types, along with a manufacturing method that includes forming these regions and using gate insulation and conductive materials to enhance performance, allowing for efficient current flow and high voltage tolerance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing transistor designs are used in high voltage applications, then voltage tolerance is limited, but on-resistance increases and power handling capacity is reduced
Solution Approach 1:
The transistor is divided into two distinct sections: a MOSFET section for voltage blocking and a JFET section for current conduction. This segmentation allows each section to be optimized for its specific function, resolving the contradiction between voltage tolerance and on-resistance by preventing the single structure from needing to compromise between conflicting requirements.
Solution Approach 2:
Different regions of the transistor are given different doping concentrations and structural characteristics tailored to their specific functions. The MOSFET region has doping optimized for high voltage blocking, while the JFET region has doping optimized for low resistance conduction. This local quality differentiation allows simultaneous achievement of high voltage tolerance and low on-resistance.
2Reliability
If high voltage tolerance is achieved through existing structures, then power handling capacity is limited, but device complexity increases
Solution Approach 1:
The MOSFET and JFET are merged into a single integrated transistor structure sharing common elements such as the substrate, drain region, and epitaxial layer. This merging achieves high voltage tolerance and improved power handling capacity while avoiding the complexity of completely separate devices by utilizing shared structural components.
Data Source
AI summary
A semiconductor device includes a first source region, a first sidewall body region, a gate region, a second source region and a link region formed in a substrate of a first conductivity type. The first source region and the second source region may be of the first conductivity type while the first sidewall body region and the link region may be of a second conductivity type opposite to the first conductivity type. The link region and the gate region are respectively disposed at a first side and a second side of the first source region. The first sidewall body region may be disposed below or underneath the first source region.