Surrounding-Gate JLFET Channel Doping for Better Turn-Off
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional junctionless field effect transistors (JLFETs) face difficulties in turning off and have a poor turn-off effect due to the same doping type in the channel and source/drain regions, leading to leakage current in the off state, which increases power consumption and fabrication complexity.
Innovation Solution
A semiconductor device with a channel region comprising a peripheral portion and a central portion, where the source/drain region and peripheral portion have a first doping type, and the central portion has a second doping type, narrowing the effective migration region and increasing the energy of the conduction and valence bands to improve the turn-off effect, eliminating the need for reverse bias voltage or metal gate work function adjustments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the channel region and source/drain region have the same doping type in a conventional JLFET, then the implementation process is simpler and thermal budget is less restricted, but the device has greater difficulty in turning off and poorer turn-off effect
Solution Approach 1:
The channel region is divided into a first doping region (same doping type as source/drain) and a second doping region (different doping type). This local differentiation allows the device to maintain simple manufacturing processes while improving turn-off characteristics through the presence of the differently-doped region that facilitates better carrier control and reduced off-state current.
2Length of moving object
If the source-drain distance continues to shrink in traditional JFET, then the device dimension is reduced, but a short-channel effect is caused
Solution Approach 1:
The invention changes the doping type parameter in the channel region by introducing a second doping region with a doping type different from the source/drain regions. This parameter change effectively suppresses the short-channel effect, allowing the device to maintain proper electrical characteristics even with reduced source-drain distance.
3Device complexity
If a conventional JLFET structure is used, then the fabrication process is simpler, but off-state leakage current increases and power consumption increases
Solution Approach 1:
By introducing a second doping region with different doping type within the channel, the invention creates a localized structural modification that reduces off-state leakage current without requiring complete restructuring of the device. This approach maintains relatively simple fabrication processes while significantly improving power consumption characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces off-state current, enhances the turn-off effect, and decreases power consumption and fabrication complexity by narrowing the effective migration region and increasing the energy bands, thereby improving the semiconductor device's performance.
Implementation Method 1
A doping concentration gradient of the JLFET is gentler... the channel region includes a peripheral portion and a central portion, the source/drain region and the peripheral portion have a first doping type, and the central portion has a second doping type
Data Source
AI summary
Embodiments relate to the field of semiconductors, and provide a semiconductor device and a method for manufacturing the same. The semiconductor device includes: an active pillar including a channel region and a source/drain region arranged on two sides of the channel region; and a gate structure surrounding at least part of the channel region. The channel region includes a peripheral portion and a central portion, the peripheral portion is positioned between the gate structure and the central portion, the source/drain region and the peripheral portion have a first doping type, and the central portion has a second doping type, where the first doping type is one of N-type and P-type, and the second doping type is other one of the N-type and the P-type. At least problems of greater difficulty in turning off existing junctionless field effect transistor and poorer turn-off effect may be solved.