JTE Doping Layout for High-Breakdown Power Semiconductors
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Solution Overview
Problem
Existing power semiconductor devices face challenges with low power, low dielectric breakdown characteristics, and low thermal conductivity, particularly requiring high breakdown voltage for applications in ultra-high voltage transmission facilities and electric vehicles.
Innovation Solution
A power semiconductor device with a novel structure, featuring a substrate with an active area and a termination area, a drift layer, bodies on the drift layer in the active area, and a junction termination extension (JTE) on the drift layer in the termination area. The JTE includes at least one blocking region and a plurality of separation regions with two or more sub-regions, each having different doses to optimize space design and enhance breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional JTE structure is used, then the device structure is simple, but the breakdown voltage is insufficient for ultra-high voltage applications
Solution Approach 1:
The JTE is divided into multiple separation regions with different dopant concentrations (first sub-region with higher dose, second sub-region with lower dose). This segmentation allows the electric field to be distributed more effectively across the termination area, enabling the device to withstand ultra-high breakdown voltages (1200V or more) while maintaining a manageable structural complexity through systematic doping patterns.
Solution Approach 2:
Different regions of the JTE are assigned different dopant concentrations tailored to their specific functional requirements. The first sub-region has a higher dose to provide strong field termination near the active area, while the second sub-region has a lower dose to maintain adequate spacing and reduce peak electric field stress. This local optimization of doping quality enables ultra-high voltage performance without requiring uniformly complex structures throughout.
2Area of stationary object
If the separation regions are placed closer to the active area, then the device area is reduced, but the electric field distribution becomes inadequate
Solution Approach 1:
The dopant concentration parameter is varied across different sub-regions within the separation regions. The first sub-region uses a higher dopant dose to provide strong electric field termination when positioned closer to the active area, while the second sub-region uses a lower dopant dose to maintain proper field distribution. This parameter optimization allows compact device layout without compromising electric field management, achieving both reduced area and reliable voltage withstand capability.
3Power
If silicon-based power semiconductors are used, then the device is compatible with existing technology, but the power handling capability and breakdown voltage are limited
Solution Approach 1:
The patent employs a composite doping structure within the JTE, combining regions with different dopant concentrations and types. This composite approach to the termination structure enables the device to achieve ultra-high voltage capability (1200V or more) and enhanced power handling, while the systematic nature of the composite structure maintains compatibility with existing semiconductor manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed power semiconductor device achieves optimized space design without design rule restrictions and secures a high breakdown voltage, effectively addressing the limitations of existing devices.
Implementation Method 1
the JTE comprises at least one blocking region and a plurality of separation regions located farther from the outermost body than the at least one blocking region, wherein each of the plurality of separation regions comprises two or more sub-regions, and wherein the two or more sub-regions have different doses
Data Source
AI summary
A power semiconductor is disclosed and for high-voltage and high-power operation. An example power semiconductor comprises: a substrate; a drift layer formed in the substrate including an active area having doped regions and a termination area configured to surround the active area; and a junction termination extension (JTE) in the termination area. In some aspects, the substrate and the drift layer comprise a first conductivity type, the doped regions and the JTE comprise a second conductivity type, the JTE comprises at least one blocking region adjacent to an edge of the active area and a plurality of separation regions, each separation region of the plurality of separation regions comprises two or more separation sub-regions, and the two or more separation sub-regions are configured to have a different dopant concentrations