Non-Volatile Memory Judgment Strings for Selective Pre-Programming

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Solution Overview

Problem

Conventional pre-programming operations before erasing in NAND flash memory cause additional burden on memory cells, leading to increased erasing time and reduced service life due to shallow erase issues, especially in advanced processes with reduced cycling capabilities.

Innovation Solution

A non-volatile memory system with judgment memory cell strings determines if memory cells have undergone programming in an isolated state, performing pre-programming only when necessary, using judgment memory cells to assess the need for pre-programming operations and adjusting the page range based on the number of erase cycles.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If pre-programming operation is performed on all pages before erasing, then shallow erase problem is prevented, but memory cell damage increases and service life decreases

Engineering Contradiction:
Improveerase qualityVSAvoidservice life
Core Design Contradiction:
ReliabilityVSDuration of action of stationary object

Solution Approach 1:

The patent applies pre-programming operation selectively to specific pages that require it, rather than uniformly to all pages. The controller identifies pages with shallow erase issues through judgment memory cells and applies pre-programming only to those specific pages, making the operation localized rather than global.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent performs pre-programming operation only on the necessary subset of pages that have shallow erase problems, rather than performing the operation on all pages. This partial action approach reduces unnecessary memory cell stress while still addressing the shallow erase issue where it actually occurs.

Inventive Principle:
Principle #16Partial or excessive action

2Reliability

If pre-programming operation is performed before erasing, then shallow erase is prevented, but erasing time increases

Engineering Contradiction:
Improveerase qualityVSAvoiderasing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies pre-programming operation selectively to specific pages that require it, rather than uniformly to all pages. The controller identifies pages with shallow erase issues through judgment memory cells and applies pre-programming only to those specific pages, making the operation localized rather than global.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent performs pre-programming operation only on the necessary subset of pages that have shallow erase problems, rather than performing the operation on all pages. This partial action approach reduces unnecessary memory cell stress while still addressing the shallow erase issue where it actually occurs.

Inventive Principle:
Principle #16Partial or excessive action

3Reliability

If pre-programming operation is performed on all pages, then shallow erase is prevented, but programming/erasing cycling capability is reduced

Engineering Contradiction:
Improveerase qualityVSAvoidcycling capability
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies pre-programming operation selectively to specific pages that require it, rather than uniformly to all pages. The controller identifies pages with shallow erase issues through judgment memory cells and applies pre-programming only to those specific pages, making the operation localized rather than global.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent performs pre-programming operation only on the necessary subset of pages that have shallow erase problems, rather than performing the operation on all pages. This partial action approach reduces unnecessary memory cell stress while still addressing the shallow erase issue where it actually occurs.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS12424290B2Non-volatile memory including judgment memory cell strings and operating method thereof
Publication Date: 2025.09.23 WINBOND ELECTRONICS CORP
  • US12424290B2 patent drawing
  • US12424290B2 patent drawing
  • US12424290B2 patent drawing

AI summary

A non-volatile memory and an operating method thereof are provided. The non-volatile memory includes a memory array and a controller. Each main memory cell string, a first judgment memory cell string, and a second judgment memory cell string of the memory array respectively includes a plurality of main memory cells, a plurality of first judgment memory cells and a plurality of second judgment memory cells. During a programming operation, the controller determines, according to a data level of each main memory cell, a data level of the corresponding first judgment memory cell, determines, according to data levels of each first judgment memory cell and its preceding first judgment memory cell, a data level of the corresponding second judgment memory cell, and accordingly determines whether to perform a pre-programming operation during an erasing operation.