Jumper Contact Over Insulating Separation Structure
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Solution Overview
Problem
Highly downscaled integrated circuit devices face challenges in minimizing the area of inter-device isolation regions and ensuring a stable insulating distance between contacts, particularly as the number of wirings and contacts increases, leading to potential short circuits and complexity in manufacturing.
Innovation Solution
The integration of an insulating separation structure on fin-type active regions, parallel to gate lines, allows jumper contacts to connect source/drain regions without overlapping gate lines, preventing short circuits and reducing the need for additional space in the inter-device isolation region, thereby minimizing the area of the inter-device isolation region and maintaining a stable insulating distance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of wirings and contacts is increased in highly downscaled integrated circuits, then the functionality and operating speed are improved, but the area of inter-device isolation region increases and the insulating distance between contacts becomes unstable
Solution Approach 1:
The patent introduces a vertical dimension by forming jumper contacts that extend through multiple levels (from a first level to a second level) to connect source/drain regions separated by the insulating separation structure. This three-dimensional contact arrangement allows electrical connection without requiring additional horizontal space in the inter-device isolation region, thereby resolving the contradiction between increased functionality and minimized isolation area.
Solution Approach 2:
The insulating separation structure acts as an intermediary element positioned between the source/drain regions. It provides both physical separation to maintain insulating distance and a platform for forming jumper contacts that bridge the separation vertically. This intermediary structure enables stable insulation while allowing electrical connection through the vertical dimension.
2Adaptability or versatility
If the number of contacts is increased in a reduced area, then the circuit functionality is enhanced, but the insulating distance between contacts becomes unstable leading to potential short circuits
Solution Approach 1:
By transitioning from a two-dimensional planar arrangement to a three-dimensional vertical arrangement, the patent allows multiple contacts to be stacked or positioned at different levels. The jumper contacts extend vertically through the insulating separation structure, enabling electrical connection while maintaining horizontal separation between contacts. This vertical stacking approach enhances circuit functionality without compromising the insulating distance stability between adjacent contacts.
Solution Approach 2:
The patent segments the contact structure into multiple parts: source/drain regions at a first level, jumper contacts extending to a second level, and connection points at the second level. This segmentation allows electrical connection to be achieved through vertical progression rather than horizontal proximity, thereby maintaining stable insulating distances between laterally adjacent contacts while enabling enhanced circuit functionality.
3Reliability
If jumper contacts are formed to connect source/drain regions without overlapping gate lines, then short circuits are prevented, but the manufacturing process becomes more complex
Solution Approach 1:
The insulating separation structure serves as an intermediary platform that enables jumper contacts to connect source/drain regions vertically without overlapping gate lines. By providing this intermediate structure, the patent achieves short circuit prevention while the manufacturing complexity is managed through the integrated formation of the insulating separation structure and jumper contacts in a coordinated process sequence.
Solution Approach 2:
The insulating separation structure is formed preliminarily before the jumper contacts are created. This preliminary action establishes the vertical pathway and isolation framework in advance, allowing subsequent jumper contact formation to proceed systematically. The gate lines are also formed in advance at appropriate levels, ensuring that jumper contacts can be formed without overlapping gate lines while maintaining a streamlined manufacturing process.
Data Source
AI summary
An integrated circuit device may include a fin-type active region extending in a first direction on a substrate; an insulating separation structure extending in a second direction that intersects the first direction on the fin-type active region; a pair of split gate lines spaced apart from each other with the insulating separation structure therebetween and extending in the second direction to be aligned with the insulating separation structure; a pair of source/drain regions located on the fin-type active region and spaced apart from each other with the insulating separation structure therebetween; and a jumper contact located over the insulating separation structure and connected between the pair of source/drain regions.