Junction-Gate Static Induction Thyristor Voltage Rise-Up Rate Control
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Solution Overview
Problem
Existing high-voltage pulse generators using static induction thyristors (SIThy) face issues with breakdown and increased size and manufacturing costs due to overdesign, and are unable to efficiently generate high-voltage short pulses with a high voltage rise-up rate.
Innovation Solution
A junction-gate type static induction thyristor design with a p-emitter, n-buffer, n-base, and p-base regions, connected in series with an inductive element, featuring a minimized effective channel area and controlled voltage rise-up rate, preventing breakdown and allowing for high-speed turn-off actions and compact, cost-effective high-voltage pulse generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large-scale high-voltage pulse generator is used to generate high-voltage short pulses, then the required high-voltage pulse can be generated, but the device size and manufacturing cost increase
Solution Approach 1:
The patent changes the operating parameters of the SIThy by controlling the gate-cathode voltage to regulate the voltage rise-up rate of the anode-cathode voltage. This parameter control allows the use of smaller, less expensive components while maintaining reliable high-voltage pulse generation capability.
Solution Approach 2:
The patent introduces dynamic control of the SIThy operation by adjusting the gate-cathode voltage in real-time to control the voltage rise-up rate. This dynamic control enables the system to operate reliably with smaller components by preventing breakdown during transient conditions.
2Speed
If the voltage rise-up rate of the high-voltage pulse is increased, then the pulse quality improves, but the SIThy breakdown risk increases
Solution Approach 1:
The patent implements feedback control by monitoring the anode-cathode voltage and adjusting the gate-cathode voltage accordingly to maintain the voltage rise-up rate below the breakdown threshold. This feedback mechanism ensures high-speed pulse generation while preventing SIThy breakdown.
Solution Approach 2:
The patent applies preliminary action by pre-setting the gate-cathode voltage to control the voltage rise-up rate before the high-voltage pulse is generated. This preliminary control prevents breakdown from occurring in the first place, allowing high-speed operation to proceed safely.
3Reliability
If the SIThy is designed with higher voltage tolerance to prevent breakdown, then reliability improves, but the device size and cost increase due to overdesign
Solution Approach 1:
The patent changes the operational parameters rather than the physical design parameters of the SIThy. By controlling the voltage rise-up rate through gate-cathode voltage adjustment, the system achieves high breakdown resistance using standard, cost-effective SIThy designs without overengineering.
Solution Approach 2:
The patent enables the SIThy to protect itself from breakdown through controlled gate-cathode voltage application. The device self-regulates its voltage rise-up rate to remain within safe operating limits, eliminating the need for oversized protective design margins.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables the generation of high-voltage short pulses with a controlled voltage rise-up rate, minimizing the risk of breakdown and reducing the physical size and manufacturing costs of the high-voltage pulse generator, while maintaining high current-carrying capacity and efficiency.
Implementation Method 1
a p-emitter region connected to the anode; an n-buffer region provided on the p-emitter region; an n-base region provided on the n-buffer region
Implementation Method 2
a p-base region buried in the n-base region and connected to a gate of the junction-gate type static induction thyristor
Implementation Method 3
a path from an anode to a cathode of the junction-gate type static induction thyristor being connected to the inductive element in series
Data Source
AI summary
A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thicknesses and impurity concentrations of a base region and a buffer region are determined such that a peak voltage obtained by a peak current at which a punch-through state is brought about does not exceed a breakdown voltage of the SIThy. Such design can achieve an SIThy having a self protecting function of autonomously preventing its breakdown without compromising a turn-on performance in which the peak voltage does not drastically exceed the breakdown voltage of the SIThy even when the peak current increases. Further, a compact SIThy capable of generating a short pulse can be achieved by reducing a gate-channel current-carrying area to a minimum.