Junctionless Transistor Dynamic Threshold Control
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Solution Overview
Problem
Junctionless and accumulation mode transistors lack independent control for dynamic threshold voltage, leakage current, and breakdown voltage, which limits their on-state and off-state characteristics and mobility.
Innovation Solution
Incorporating a threshold voltage control mechanism with different dopants or materials in the source and drain regions, allowing for dynamic control of voltage threshold, leakage current, and breakdown voltage through DC biasing at the junction terminal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a p type (or n type) channel is formed under the gate to electrically connect source and drain, then the transistor can operate with gate terminal modulation, but there is no independent control for dynamic threshold voltage, leakage current, and breakdown voltage
Solution Approach 1:
The invention segments the channel region into multiple regions with different doping types (e.g., p-type and n-type regions). This segmentation allows independent control of threshold voltage, leakage current, and breakdown voltage through selective doping, resolving the contradiction by enabling dynamic control while maintaining transistor operation capability.
Solution Approach 2:
The invention applies local quality by creating regions with different doping characteristics within the channel. Specific areas have p-type doping while others have n-type doping, allowing localized control of electrical properties. This enables independent adjustment of threshold voltage, leakage current, and breakdown voltage without affecting the entire channel uniformly.
2Manufacturing precision
If on-state and off-state characteristics are inversely related through process parameters, then threshold voltage and sub-threshold slope can be controlled, but mobility degradation occurs resulting in higher on-state resistance
Solution Approach 1:
The invention uses local quality by implementing selectively doped regions within the channel. High-doping regions provide threshold voltage control while low-doping regions preserve carrier mobility. This localized differentiation allows precise control of off-state characteristics without sacrificing on-state mobility, resolving the contradiction between manufacturing precision and device reliability.
Solution Approach 2:
The channel is segmented into regions with different doping concentrations and types. This segmentation enables independent optimization of threshold voltage control in certain regions while maintaining high mobility in other regions, thereby achieving both precise characteristic control and low on-state resistance simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the off-state characteristics, improves linearity, and increases breakdown voltage, making the transistors suitable for applications like RF switches and low-noise amplifiers by providing independent control over drain current and threshold voltage.
Implementation Method 1
the threshold voltage control is a different dopant or material of a source region and a drain region of the circuit
Implementation Method 2
dynamically controlling a voltage threshold, leakage current, and breakdown voltage by providing a dc bias at a junction terminal
Data Source
AI summary
The present disclosure relates to a semiconductor device, and more particularly, to a junctionless/accumulation mode transistor with dynamic control and method of manufacturing. The circuit includes a channel region and a threshold voltage control on at least one side of the channel region, the threshold voltage control being configured to provide dynamic control of a voltage threshold, leakage current, and breakdown voltage of the circuit, wherein the threshold voltage control is a different dopant or material of a source region and a drain region of the circuit.