Junctionless Transistor Driving Current via Joule Heat
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Solution Overview
Problem
Junctionless transistors face performance degradation due to increased parasitic resistance resulting from reduced doping concentration in the channel region to inhibit short channel effects, which limits their driving current.
Innovation Solution
The method involves generating local Joule heat by applying a voltage to the source and drain regions, increasing the dopant concentration in these regions, and using this heat to enhance the channel region's current flow, thereby reducing parasitic resistance and improving transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the doping concentration of the channel region is reduced to inhibit the short channel effect, then the short channel effect is suppressed, but the parasitic resistance increases and transistor performance degrades
Solution Approach 1:
The patent applies different doping concentrations to different regions: the channel region maintains low doping concentration to suppress short channel effect, while the source and drain regions are selectively doped with higher concentration to reduce parasitic resistance. This local differentiation resolves the contradiction by optimizing each region's doping level according to its specific functional requirements.
Solution Approach 2:
The transistor structure is segmented into distinct functional regions (channel, source, drain) with independently optimized doping concentrations. The channel region uses low doping for short channel effect control, while source and drain regions use high doping for reduced parasitic resistance, allowing each segment to perform its specific function optimally without compromising the other.
2Reliability
If the doping concentration of the channel region is reduced to inhibit the short channel effect, then the short channel effect is suppressed, but the driving current decreases
Solution Approach 1:
The patent implements local quality optimization by maintaining low doping concentration in the channel region for short channel effect suppression while applying high doping concentration to the source and drain regions. This selective doping approach increases the driving current by reducing contact resistance at the source and drain terminals without affecting the channel's ability to control the short channel effect.
Solution Approach 2:
The transistor is segmented into functionally distinct regions with optimized doping levels: the channel region maintains low doping for reliability, while the source and drain regions are enhanced with high doping to improve driving current. This segmentation allows simultaneous optimization of both short channel effect inhibition and driving current performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases the driving current of junctionless transistors by reducing parasitic resistance while maintaining other key transistor characteristics, such as threshold voltage and subthreshold swing, through controlled Joule heat application.
Implementation Method 1
An amount of current flowing through the nanowire channel region is increased by joule heat generated by applying a voltage to the source region and the drain region
Data Source
AI summary
Provided is a method for increasing a driving current of a junctionless transistor that includes: a substrate; a source region and a drain region which are formed on the substrate and are doped with the same type of dopant; a nanowire channel region which connects the source region and the drain source and is doped with the same type dopant as that of the source region and the drain region; a gate insulation layer which is formed to surround the nanowire channel region; and a gate electrode which is formed on the gate insulation layer and is formed to surround the nanowire channel region. An amount of current flowing through the nanowire channel region is increased by joule heat generated by applying a voltage to the source region and the drain region.