Junction-less Transistor Reverse Polarity Leakage Reduction
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Solution Overview
Problem
Conventional transistors face challenges in miniaturization due to the short-channel effect, leading to increased leakage current and power consumption, and the use of silicon dioxide-based silicon-on-insulator (SOI) substrates results in high production costs.
Innovation Solution
A junction-less transistor with a reverse polarity structure is developed, comprising a substrate and semiconductor body with opposite polarities, using a monocrystalline silicon substrate to reduce leakage current and production costs, while maintaining comparable performance to SOI-based transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a conventional transistor is miniaturized to reduce size, then the device dimensions are reduced, but the short-channel effect increases leading to higher leakage current
Solution Approach 1:
The patent inverts the conventional transistor structure by placing the semiconductor body on the substrate rather than embedding it within, creating a surface-mounted configuration. This inversion allows the channel to be formed at the interface between the semiconductor body and substrate, where the electric field distribution is fundamentally different, thereby suppressing the short-channel effect even in miniaturized devices
Solution Approach 2:
The patent changes the structural parameters of the transistor by introducing a distinct semiconductor body layer with specific thickness (0.5-5 micrometers) and conductivity type opposite to the substrate. This parameter change creates a new operational regime where the channel formation and electric field distribution are controlled by the semiconductor body-substrate interface rather than conventional junctions, effectively reducing leakage current in small devices
2Object-generated harmful factors
If an SOI substrate made of silicon dioxide is used to reduce leakage current, then the leakage current is suppressed, but the production cost increases
Solution Approach 1:
The patent replaces the expensive silicon dioxide SOI substrate with a conventional monocrystalline silicon substrate that is already widely available and cost-effective in standard semiconductor manufacturing. The semiconductor body layer acts as the functional replacement for the SOI buried oxide, providing the necessary electrical isolation and channel control without requiring costly specialized substrates
Solution Approach 2:
The patent changes the substrate material parameter from silicon dioxide (SOI) to monocrystalline silicon, fundamentally altering the manufacturing ecosystem. This allows the use of existing, well-established fabrication processes and readily available substrates, dramatically reducing production costs while maintaining the ability to suppress leakage current through the semiconductor body interface structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reverse polarity structure effectively suppresses surface scattering and leakage current, offering a lower production cost and improved on/off current ratio, with adjustable threshold voltage and enhanced application flexibility.
Implementation Method 1
electrons in the channel section are affected by a junction electric field in the channel section and between the gate insulation layer and the substrate to suppress surface scattering
Data Source
AI summary
A junction-less transistor having an reverse polarity structure includes a substrate, a semiconductor body, a gate and a gate insulation layer. The substrate has a first polarity. The semiconductor body is disposed on the substrate, and includes a drain, a source and a channel section connected between the drain and the source. The gate covers one side of the channel section away from the substrate. The semiconductor body has a second polarity opposite to the first polarity. With the semiconductor body and the substrate respectively having the opposite second polarity and first polarity, a leakage current can be reduced while also lowering element production costs.