Key-Hole Local Interconnect Self-Alignment in SRAM
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in providing structures and methods for local interconnects that effectively connect gate electrodes and source/drain regions with improved resistance to process variations, particularly in complex layouts like static random access memory (SRAM) devices.
Innovation Solution
A method for manufacturing a semiconductor device involves forming a local interconnect by creating a key-hole shaped structure that self-aligns between the gate electrode and the source/drain region, using a combination of metal gates, cap insulating layers, sidewall spacers, and interlayer dielectric layers, which allows for precise connection while minimizing alignment errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing processes are used for local interconnects, then the structure can be formed, but alignment errors occur and process variation resistance is poor
Solution Approach 1:
The method performs preliminary actions by forming the gate electrode and source/drain region first, then forming the local interconnect structure to self-align between them. The key-hole shaped structure is prepared in advance with specific dimensions and positions that enable automatic alignment during subsequent processing steps, preventing alignment errors before they occur
Solution Approach 2:
The local interconnect structure achieves self-alignment between the gate electrode and source/drain region through its key-hole shaped geometry and dimensional relationships. The structure automatically positions itself correctly relative to the gate and source/drain without requiring additional alignment operations, making the system self-correcting for alignment errors
2Ease of manufacture
If the local interconnect structure is simplified, then manufacturing is easier, but short circuits may occur
Solution Approach 1:
The local interconnect is divided into multiple distinct portions: a first portion extending from the gate electrode, a second portion extending to the source/drain region, and a third portion connecting them. This segmentation creates natural isolation zones that prevent short circuits while maintaining a relatively simple overall structure that is easy to manufacture using standard semiconductor processing techniques
Data Source
AI summary
A semiconductor device comprises a first gate electrode disposed on a substrate, a first source/drain region, and a local interconnect connecting the first gate electrode and the first source/drain region. The local interconnect is disposed between the substrate and a first metal wiring layer in which a power supply line is disposed. The local interconnect has a key hole shape in a plan view, and has a head portion, a neck portion and a body portion connected to the head portion via the neck portion. The neck portion is disposed over the first gate electrode and the body portion is disposed over the first source/drain region.