Wafer-Scale KGD Hybrid Bonding with Offset Pad-Via Alignment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current packaging architectures for wafer-scale known-good-die (KGD) hybrid bonding face challenges such as waste of resources due to attaching non-functional dies, defects from foreign materials, and sensitivity to die singulation and thickness variations, which hinder efficient manufacturing yield and interconnect density.
Innovation Solution
A microelectronic assembly is proposed with a substrate and layers of dies, where the second layer includes KGDs coupled to the first layer through hybrid bonding using metal-to-metal bonds and fusion bonds, with offset bond pads and vias for precise alignment and bonding, enabling high-density interconnects and improved yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wafer-scale KGD hybrid bonding is implemented, then manufacturing yield is improved, but resource waste occurs due to attaching non-functional dies
Solution Approach 1:
The patent performs preliminary singulation and functional testing of dies before the hybrid bonding process. By identifying and separating non-functional dies prior to bonding, the system ensures that only known-good-dies are attached to the substrate, thereby improving manufacturing yield while preventing resource waste from bonding defective components.
2Ease of manufacture
If conventional bonding processes are used, then manufacturing simplicity is maintained, but defects occur from foreign materials
Solution Approach 1:
The patent introduces an intermediary carrier wafer system that holds multiple singulated dies during processing. This carrier wafer acts as a mediator between the dies and the final substrate, enabling controlled placement and reducing the risk of foreign material contamination while maintaining manufacturing simplicity through a standardized intermediate handling platform.
3Adaptability or versatility
If die singulation is performed, then individual die processing is enabled, but sensitivity to thickness variations increases
Solution Approach 1:
The patent performs preliminary thickness measurement and sorting of singulated dies before bonding. By characterizing die thickness variations in advance and grouping dies with similar thickness characteristics, the system enables individual die processing while compensating for thickness variations through selective placement and adjusted bonding parameters, thereby maintaining manufacturing precision.
4Quantity of substance
If hybrid bonding with metal-to-metal bonds is implemented, then interconnect density is improved, but bonding precision requirements increase
Solution Approach 1:
The patent replaces traditional mechanical alignment methods with optical alignment systems that use alignment marks and imaging techniques to position dies on the substrate. This substitution enables high-precision bonding required for dense metal-to-metal interconnects by providing sub-micron positioning accuracy, thereby achieving high interconnect density without compromising bonding precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances manufacturing yield and interconnect density by ensuring only functional dies are used, reducing defects, and allowing for precise bonding, thus improving the overall performance and efficiency of the packaging process.
Implementation Method 1
coupled to the first layer by hybrid bond interconnects having a first bond pad and a second bond pad
Implementation Method 2
hybrid bonding using metal-to-metal bonds and fusion bonds
Data Source
AI summary
Disclosed herein are microelectronic assemblies, related apparatuses, and methods. In some embodiments, a microelectronic assembly may include a first die in a first layer; and a second and third die in a second layer, the second layer coupled to the first layer by hybrid bond interconnects having a first pad and a second pad, wherein the first pad is coupled to a first via in the second die and the first pad is offset from the first via by a first dimension, and the second pad is coupled to a second via in the third die and the second pad is offset from the second via by a second dimension different than the first dimension. In some embodiments, the first pad is offset from the first via in a first direction and the second pad is offset from the second via in a second direction different than the first direction.


