Superconducting Nitride PVD Using Krypton for Room-Temperature Integration

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Solution Overview

Problem

Existing methods for integrating superconducting materials into electronic devices require high temperatures that can damage or distort other materials, and conventional physical vapor deposition (PVD) methods struggle to achieve optimal superconducting phases and uniformity, particularly with niobium nitride (NbN), limiting device performance and integration capabilities.

Innovation Solution

The use of krypton as a carrier gas in PVD processes at room temperature allows for the deposition of superconducting metal nitrides, such as NbN, enabling integration with other materials without distortion and achieving a wider range of optimal superconducting phases and improved uniformity, while allowing for planar process integration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional PVD methods are used to deposit superconducting metal nitrides, then deposition can be achieved, but the superconducting phases obtained are not optimal and uniformity is poor

Engineering Contradiction:

Improveuniformity of superconducting phaseVSAvoiddevice performance

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent changes the carrier gas parameter from conventional argon to krypton, which has a higher atomic mass and different sputtering characteristics. This parameter change results in improved uniformity of superconducting phase deposition and better control over stoichiometry, directly resolving the contradiction between manufacturing precision and device performance reliability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses krypton as an inert carrier gas in the PVD process to create a controlled inert atmosphere that prevents oxidation and contamination during deposition. This inert environment ensures optimal superconducting phase formation and maintains material purity, thereby improving both uniformity and device performance

Inventive Principle:

Principle #39Inert atmosphere (Inert environment)

2Reliability

If high temperature processing is used to integrate superconducting materials, then superconducting phases can be achieved, but other materials are damaged or distorted

Engineering Contradiction:

Improvesuperconducting phase qualityVSAvoiddamage to other materials

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent employs room temperature deposition as a parameter change from conventional high temperature processing. By using krypton carrier gas with reactive sputtering at room temperature, the method achieves optimal superconducting phases without exposing other device materials to damaging high temperatures, thereby resolving the contradiction between superconducting phase quality and material integrity

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces thermal processing (heat-based phase formation) with a mechanical/physical process (reactive sputtering at room temperature). This substitution allows superconducting metal nitride formation through plasma-based reactions rather than thermal diffusion, eliminating the harmful thermal effects on other materials while maintaining phase quality

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Manufacturing precision

If room temperature PVD is used with krypton, then optimal superconducting phases and uniformity are achieved, but the process complexity increases

Engineering Contradiction:

Improvesuperconducting phase uniformityVSAvoidprocess integration complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent demonstrates that the krypton-based reactive sputtering process can be integrated into existing semiconductor manufacturing equipment and workflows. The process uses standard PVD chambers with modified gas delivery systems, allowing the specialized krypton process to be implemented within existing manufacturing infrastructure, thereby reducing the actual increase in process complexity

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the production of higher-Tc superconducting phases with reduced impurity effects, improving device performance and enabling the integration of superconductors into complex devices with better electrical resistance and kinetic inductance properties, while reducing cooling requirements.

Implementation Method 1

The depositing includes sputtering metal from a metal target using the second inert gas, the sputtered metal being provided to the substrate along with a portion of the nitrogen gas

Methodology Applied

Scientific EffectSputtering: Sputtering

Implementation Method 2

depositing a superconducting metal nitride layer over a substrate in a plasma processing chamber charged with a first inert gas including nitrogen gas and a different second inert gas

Methodology Applied

Scientific EffectPlasma: Plasma

Data Source

PatentUS20260020500A1Systems and methods for physical vapor deposition of superconductors

Publication Date: 2026.01.15 TOKYO ELECTRON LTD

AI summary

A method of forming a superconducting device includes depositing a superconducting metal nitride layer over a substrate in a plasma processing chamber charged with a first inert gas including nitrogen gas and a different second inert gas. The depositing includes sputtering metal from a metal target using the second inert gas, the sputtered metal being provided to the substrate along with a portion of the nitrogen gas.