KTN Optical Phase Shifter for Efficient Light Phase Control
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Solution Overview
Problem
Conventional optical phase shifters using lithium niobate (LiNbO3) and barium titanate (BaTiO3) have low electro-optic effects, limiting the efficiency of light phase control and optical modulation in optical modulators.
Innovation Solution
The use of potassium tantalum niobate (KTN, KTaO3) as the waveguide material in an optical phase shifter, integrated with a silicon substrate and electrodes, allows for improved electro-optical performance through controlled refractive index changes via applied electric fields, enhancing light phase control and modulation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If lithium niobate (LiNbO3) or barium titanate (BaTiO3) is used as waveguide material, then the device structure is simple and easy to manufacture, but the electro-optic effect is low resulting in poor light phase control efficiency
Solution Approach 1:
The patent uses a composite structure combining silicon waveguide with KTN thin film layer. The silicon substrate provides mechanical support and waveguide functionality, while the KTN thin film layer provides strong electro-optic effect. This composite material approach allows the device to maintain manufacturing simplicity while achieving high light phase control efficiency through the KTN material's large electro-optic coefficient.
2Reliability
If KTN (KTaNbO3) is used as waveguide material, then the electro-optic effect is enhanced improving light phase control efficiency, but the device structure and manufacturing process become more complex
Solution Approach 1:
The patent segments the waveguide structure into distinct functional layers: a silicon waveguide layer for light propagation and a separate KTN thin film layer for electro-optic modulation. This segmentation allows each layer to be optimized independently and integrated through standard thin film deposition techniques, reducing overall device complexity while maintaining high light phase control efficiency.
Solution Approach 2:
The patent introduces an intermediary layer between the silicon waveguide and the KTN thin film. This intermediary layer facilitates proper adhesion and optical coupling between the two materials, enabling the integration of KTN's superior electro-optic properties into the silicon photonic platform without creating manufacturing obstacles.
3Ease of manufacture
If conventional waveguide materials are used, then the manufacturing process is simple, but the optical modulation efficiency of optical modulator is low
Solution Approach 1:
The patent changes the material parameter by incorporating KTN thin film with a large electro-optic coefficient into the waveguide structure. This parameter change in material properties directly enhances the optical modulation efficiency, allowing faster and more efficient light phase modulation while maintaining compatibility with existing silicon-based manufacturing processes through thin film deposition techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The KTN-based optical phase shifter achieves enhanced light phase control and modulation efficiency, improving the performance of optical modulators by leveraging its larger electro-optical coefficient compared to conventional materials.
Implementation Method 1
a refractive index of the KTN waveguide may be changed by the electric field, and a phase of a light passing through the KTN waveguide may be controlled by the change of the refractive index
Data Source
AI summary
Provided is an optical phase shifter. The optical phase shifter includes: a silicon substrate; a cladding layer disposed on the silicon substrate; an intermediate film disposed on the cladding layer; a KTN (KTaNbO3) waveguide disposed on the intermediate film; a protective layer disposed on the intermediate film to cover the KTN waveguide; and first and second electrodes disposed on the intermediate film while being spaced apart from each other with the KTN waveguide interposed between the first and second electrodes, wherein a silicon waveguide is disposed inside the cladding layer while being spaced apart from the KTN waveguide with the intermediate film interposed between the silicon waveguide and the KTN waveguide.