L-Shaped Dummy Gate Line for Insulation Distance Stability
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Solution Overview
Problem
In semiconductor devices, there is a challenge in maintaining reliable insulation distances between gate lines and contacts, especially when the gate lines are inclined, which can lead to electrical short-circuits in densely integrated circuits.
Innovation Solution
The semiconductor device incorporates a dummy gate structure with an L-shaped dummy gate line and spacers, along with a dummy gate capping layer, which are inclined to secure insulation distances effectively, even in small areas, by varying the thickness of the horizontal and vertical sections of the gate line and spacers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the gate line is inclined to increase integration density, then the area occupied by the gate line is reduced, but the insulation distance between the gate line and contacts becomes insufficient, leading to electrical short-circuits
Solution Approach 1:
The gate line structure is segmented into multiple functional layers: a dummy gate line layer providing mechanical support and spacing, and a real gate line layer providing electrical functionality. This segmentation allows the dummy gate line to be positioned at an incline for area reduction while the real gate line maintains proper insulation distance through the spacer layer, resolving the contradiction between area reduction and reliability.
Solution Approach 2:
A spacer layer is introduced as an intermediary element between the dummy gate line and the contact structures. This spacer layer explicitly maintains the required insulation distance, acting as a mediator that allows the gate line to be inclined for area reduction while preventing electrical short-circuits through maintained insulation.
2Productivity
If the gate line thickness is reduced to fit more circuits in a small area, then the integration density increases, but the gate line becomes more susceptible to electrical short-circuits with surrounding contacts
Solution Approach 1:
The gate line system is divided into a dummy gate line component and a real gate line component. The dummy gate line can be made with sufficient thickness to maintain structural integrity and spacing, while the real gate line is optimized for electrical performance. This segmentation allows high integration density through reduced real gate line dimensions while maintaining reliability through the thicker dummy gate line structure.
Solution Approach 2:
The spacer layer serves as an intermediary that explicitly controls the insulation distance between the gate line structure and contact structures. This mediator ensures that even when the real gate line is thin for high integration density, the required insulation distance is maintained through the spacer, preventing electrical short-circuits.
3Ease of manufacture
If a uniform thickness gate line is used, then the manufacturing process is simpler, but the insulation distance cannot be stably secured when the gate line is inclined
Solution Approach 1:
The gate line structure is segmented into multiple layers with different thickness characteristics. The dummy gate line layer can have uniform thickness for ease of manufacture, while the spacer layer provides the precise thickness control needed for stable insulation distance. This segmentation allows simple fabrication of the dummy gate line while achieving precise insulation through the dedicated spacer layer.
Solution Approach 2:
The spacer layer acts as an intermediary that decouples the manufacturing simplicity requirement from the insulation precision requirement. The dummy gate line can be manufactured with uniform thickness using simple processes, while the spacer layer is specifically designed and controlled to provide the precise insulation distance needed, separating these two conflicting requirements into different structural elements.
Data Source
AI summary
A semiconductor device includes first and second active regions on a substrate, an element isolation layer between the first and second active regions, a dummy gate line, dummy gate spacers at opposite side walls of the dummy gate line, and a dummy gate capping layer on the dummy gate line and. An upper surface of the element isolation layer is proximate to an upper surface of the substrate in relation to an upper end of the first active region in a vertical direction. The dummy gate line includes a horizontal section extending on the first active region to the element isolation layer in a horizontal direction, and a vertical section extending downwards from the horizontal section along a side wall of the first active region, the dummy gate line having an L shape, a vertical thickness of the horizontal section being smaller than a vertical thickness of the vertical section.