L-Shaped Lithography Mask Feature for Semiconductor Patterning
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Solution Overview
Problem
As semiconductor devices shrink in size, the patterning of features becomes increasingly challenging due to inaccurate or unpredictable transfer of lithography mask patterns, making it difficult to maintain performance and reduce power consumption while meeting smaller packaging requirements.
Innovation Solution
A method involving the formation of an L-shaped structure in a photo-sensitive layer using a lithography mask with an L-shaped feature having a non-orthogonal edge, allowing for the creation of semiconductor devices with a single exposure process, which reduces silicon area usage and improves manufacturing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography masks with orthogonal edges are used, then manufacturing process is simple, but patterning precision deteriorates as feature sizes diminish
Solution Approach 1:
The patent applies asymmetry by using L-shaped mask features with non-orthogonal edges instead of conventional orthogonal rectangular features. This asymmetric design allows the mask to create structures that account for optical diffraction effects, thereby improving patterning precision at reduced feature sizes while managing the increased design complexity through deliberate geometric modification.
2Use of energy by moving object
If feature sizes are reduced to improve device performance, then power consumption is reduced, but patterning accuracy deteriorates
Solution Approach 1:
The patent applies parameter changes by modifying the geometric parameters of the mask features (using L-shapes with non-orthogonal edges at 45-degree angles) rather than simply scaling down orthogonal rectangles. This parameter modification allows smaller feature sizes to be patterned accurately by compensating for optical effects, enabling reduced power consumption without sacrificing patterning accuracy.
3Manufacturing precision
If multiple exposure processes are used to create complex structures, then manufacturing precision is maintained, but productivity decreases
Solution Approach 1:
The patent applies merging by combining multiple patterning operations into a single exposure process. The L-shaped mask features are designed to create multiple structural elements (such as contacts and vias) in one exposure step, eliminating the need for sequential exposures and thereby maintaining manufacturing precision while significantly improving productivity.
4Area of stationary object
If L-shaped structures with non-orthogonal edges are formed, then silicon area is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent applies asymmetry to reduce silicon area by using L-shaped features with non-orthogonal edges that optimize the layout and minimize the footprint of semiconductor structures. While this asymmetric design reduces area, the patent manages manufacturing complexity by using standard lithography processes with specifically designed mask patterns, making the manufacturing feasible despite the geometric complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the precise formation of L-shaped structures in semiconductor devices with a single exposure process, reducing silicon area usage and enhancing manufacturing efficiency, while allowing for the production of smaller, more efficient semiconductor devices.
Implementation Method 1
forming an L-shaped structure in the photo sensitive layer by exposing the photo sensitive layer to light via a reticle
Data Source
AI summary
In accordance with an embodiment of the present invention, a method for making a semiconductor device comprises forming a photo sensitive layer on a semiconductive substrate, and forming an L-shaped structure in the photo sensitive layer by exposing the photo sensitive layer to light via a reticle, wherein the reticle comprises an L-shapes feature having a first non-orthogonal edge at an intersection of two legs of the L-shaped feature.