L-Shaped RP Cell Layout for Higher CFET Transistor Density
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Solution Overview
Problem
Current semiconductor integrated circuit (IC) designs face challenges in maximizing transistor density due to inefficient use of space in complementary field-effect transistor (CFET) architectures, particularly in the arrangement of dummy and resident regions within the L-shape regions of rectangular parallelepiped (RP) cell structures.
Innovation Solution
The proposed solution involves optimizing the RP cell region design by filling the notch of the L-shape region with a narrower dummy region and a resident region, allowing for greater density and enabling the abutting and overlapping of RP cell regions, thereby reducing wasted space and increasing device density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional RP cell region design is used with L-shape regions containing dummy regions, then space is allocated for CFET architecture, but wasted space reduces transistor density
Solution Approach 1:
The patent merges the dummy region and resident region into a single integrated structure within the L-shape region. The dummy transistors and resident transistors are combined in a unified arrangement where the dummy transistors serve as placeholders that also contribute to the overall density optimization, eliminating the need for separate dedicated dummy regions and thereby reducing wasted space while increasing transistor density.
Solution Approach 2:
The patent utilizes three-dimensional stacking of transistor components within the L-shape region. By arranging transistors in multiple layers vertically rather than only in a planar two-dimensional layout, the design effectively adds a third dimension to the cell region utilization. This vertical stacking allows more transistors to be packed into the same footprint area, significantly increasing transistor density without proportionally increasing the occupied area.
2Area of stationary object
If narrower dummy region and resident region are placed in the notch of L-shape region, then space efficiency increases, but RP cell regions cannot be abutted and overlapped
Solution Approach 1:
The patent employs asymmetric design in the L-shape region configuration, where the arm and stem have different dimensions and the notch is positioned to create an asymmetric profile. This asymmetric geometry allows RP cell regions to be abutted and overlapped in specific orientations while maintaining optimal space utilization. The asymmetric design provides complementary interfaces that enable neighboring cell regions to fit together like puzzle pieces, achieving both space efficiency and adaptability for various layout configurations.
3Reliability
If L-shape region with dummy and resident regions is used, then CFET architecture functionality is maintained, but transistor density is reduced due to space allocation for non-functional dummy regions
Solution Approach 1:
The patent designs the dummy transistors to serve multiple functions: they act as placeholders for process compatibility, provide electrical isolation, contribute to the overall transistor density, and enable proper stacking configurations for CFET architecture. By making the dummy regions multi-functional rather than purely sacrificial elements, the design maintains the necessary CFET functionality while maximizing their contribution to transistor density, thereby reducing the trade-off between reliability and density.
Data Source
AI summary
A rectangular parallelepiped (RP) cell region includes: a 3D L-shape region, a dummy region and a resident region each of which includes transistor components, transistors of the resident region being free from comprising a function of the L-shape region; the dummy region and the resident region being in first notch formed by an arm and a stem of the L-shape region; first type transistors of the arm being stacked correspondingly over second type transistors of the first part of the stem; dummy transistor(s) of the dummy region being stacked over second type transistors of the second part of the stem; and first type transistors of the resident region being stacked over second type transistors of the third part of the stem.