Ladder Electrode Semiconductor Detector Energy Resolution
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Solution Overview
Problem
The energy resolution of CdZnTe semiconductor detectors is limited by carrier trapping and low carrier mobility due to structural defects, leading to reduced performance in measuring high-energy spectra.
Innovation Solution
The semiconductor detector design incorporates a semiconductor crystal with a cathode, an anode, and ladder electrodes, which increases the average electric field intensity, reducing carrier drift time and trapping, thereby enhancing energy resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a CdZnTe semiconductor detector is used to achieve room temperature operation and high detection efficiency, then the detector can be easily carried and has high detection efficiency, but the energy resolution is reduced due to carrier trapping and low carrier mobility
Solution Approach 1:
The patent divides the single electrode into multiple ladder electrodes arranged in a stepped configuration. This segmentation creates multiple electric field regions with different intensities, allowing carriers to be accelerated progressively through each ladder level, thereby reducing drift time and trapping effects while maintaining room temperature operation
Solution Approach 2:
The patent transitions from a conventional planar electrode structure to a three-dimensional ladder structure with vertical and horizontal dimensions. This dimensional change creates a more complex electric field distribution that effectively reduces carrier drift path length and trapping probability, improving energy resolution without sacrificing room temperature operation capability
2Productivity
If the semiconductor crystal structure is used to detect high energy rays, then high detection efficiency is achieved, but structural defects cause low carrier mobility and short carrier lifetime
Solution Approach 1:
The patent applies a preliminary high electric field through the ladder electrode structure before carriers can be trapped by structural defects. This preliminary acceleration action reduces the time carriers spend in the crystal lattice, minimizing their exposure to trapping sites and extending effective carrier lifetime for signal generation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved electric field structure within the detector shortens carrier drift times, reducing trapping and significantly improving the energy resolution of the semiconductor detector, as demonstrated by a 1.1%@662keV energy resolution in measurements.
Implementation Method 1
electrons and holes generated through interaction between high energy rays and the crystal
Implementation Method 2
electrons and holes generated through interaction between high energy rays and the crystal move in different directions under the effect of the electric field
Implementation Method 3
electrons and holes generated through interaction between high energy rays and the crystal move in different directions under the effect of the electric field
Implementation Method 4
electrons and holes generated through interaction between high energy rays and the crystal move in different directions under the effect of the electric field
Data Source
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AI summary
The invention provides a semiconductor detector (100), and the semiconductor detector (100) comprises a semiconductor crystal (101), a cathode (102), an anode (103) and at least one ladder electrode (104); the semiconductor crystal (101) comprises a top surface (101-2), a bottom surface (101-1) and at least one side (101-3); the cathode (102), the anode (103) and the ladder electrode (104) are conductive thin films deposited on a surface of the semiconductor crystal (101); the cathode (102) is disposed on the bottom surface (101-1) of the semiconductor crystal (101), the anode (103) is disposed on the top surface (101-2) of the semiconductor crystal (101), the ladder electrode (104) is disposed on the at least one side (101-3) of the semiconductor crystal (101); and the ladder electrode (104) comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.