Laminate Semiconductor Structure for Simplified Capacitor Etching
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Solution Overview
Problem
The manufacturing process for capacitors in semiconductor devices is complex due to the need to remove sacrificial materials and form high-k dielectric materials, which complicates the formation of the capacitor structure.
Innovation Solution
A laminate structure is formed with alternating sacrificial and support layers, where the support layers include doped areas with lower hardness, allowing for simultaneous removal through etching, simplifying the process by using dry and wet etching processes to form gaps and remove these layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional sequential etching process is used to remove sacrificial material and form capacitor structure, then the capacitor structure can be formed, but the manufacturing process becomes complicated and time-consuming
Solution Approach 1:
The patent combines the removal of sacrificial material and the formation of capacitor electrode structures into a single etching step. By designing the sacrificial layer with the same etch selectivity as the underlying layers, both the sacrificial material and the support structures are removed simultaneously, eliminating the need for separate etching steps and simplifying the manufacturing process
Solution Approach 2:
The patent applies preliminary doping to the sacrificial layer before the etching process. This doping modifies the etch selectivity of the sacrificial layer in advance, ensuring that it can be removed together with the support layers during the same etching step, thereby preparing the structure for simultaneous removal before the actual fabrication begins
2Ease of manufacture
If multiple separate etching steps are performed to remove different layers, then complete removal can be achieved, but the process complexity increases
Solution Approach 1:
The patent applies different doping concentrations and types to different regions of the sacrificial layer, creating local variations in etch selectivity. This allows the sacrificial layer to be removed at different rates in different areas during a single etching step, ensuring complete removal while maintaining control over the etching process and avoiding the need for multiple sequential steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process by enabling simultaneous removal of doped areas and sacrificial layers, reducing complexity and maintaining structural integrity for the capacitor structure.
Implementation Method 1
Ion implantation is performed on a portion of each of the plurality of initial support layers to form a plurality of support layers each including a plurality of doped areas and a plurality of body areas
Implementation Method 2
A first etching process is performed to form a plurality of first gaps penetrating through the plurality of body areas and the plurality of sacrificial layers in the laminate structure
Data Source
AI summary
A method for forming a semiconductor structure and a method for forming a laminate structure include the following operations. A laminate structure is provided, the laminate structure including a plurality of sacrificial layers and a plurality of support layers alternately stacked on one another, each support layers includes a plurality of doped areas and a plurality of body areas. A first etching process is performed to form a plurality of first gaps penetrating through the plurality of body areas and the plurality of sacrificial layers in the laminate structure. A first material layer is deposited on inner walls of the plurality of first gaps. A second etching process is performed to remove the plurality of doped areas and the plurality of sacrificial layers to form a second gap between any two adjacent first gaps.