Laminate Resist Structure for High-Resolution EUV Patterning
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Solution Overview
Problem
Existing chemically amplified resist compositions face challenges in achieving high sensitivity and resolution for micro-patterning due to acid diffusion and shot noise in EUV lithography, leading to issues like pattern collapse and disconnection, especially for feature sizes below 16 nm.
Innovation Solution
A laminate structure comprising a substrate, an adherent film, and a resist film formed from a non-chemically-amplified resist composition containing hypervalent iodine compounds and carboxy-containing compounds, which enhances sensitivity and resolution through photolithography processes using high-energy radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If chemically amplified resist composition is used to enhance sensitivity and contrast, then sensitivity and contrast are improved, but acid diffusion causes image blur and resolution deteriorates
Solution Approach 1:
The patent extracts and eliminates the chemical amplification mechanism (acid diffusion) from the resist system, transitioning from chemically amplified resist to non-chemically amplified resist. This removes the source of acid diffusion-induced blur while maintaining sufficient sensitivity through direct photolithography mechanisms, thereby resolving the contradiction between enhanced sensitivity/contrast and resolution.
Solution Approach 2:
The patent changes the fundamental operating parameters of the resist system by switching from chemical amplification (acid-catalyzed reactions) to direct photochemical reactions. This parameter change eliminates the diffusion process that causes blur while maintaining the necessary sensitivity for patterning, thus improving resolution without sacrificing sensitivity.
2Manufacturing precision
If EUV lithography is used to reduce feature size, then resolution is improved, but shot noise increases and manufacturing precision deteriorates
Solution Approach 1:
The patent introduces an intermediary approach by using a non-chemically amplified resist composition that is specifically designed to be less sensitive to shot noise. The resist formulation includes components that provide stochastic robustness, acting as a mediator between the random photon arrival (shot noise) and the pattern formation process, thereby maintaining manufacturing precision despite EUV shot noise.
3Manufacturing precision
If non-chemically-amplified resist material is used to avoid acid diffusion, then resolution is improved, but sensitivity becomes insufficient
Solution Approach 1:
The patent employs a composite resist material system that combines multiple components to achieve both high resolution and sufficient sensitivity. The non-chemically amplified resist composition includes specific polymers and photoactive agents that work synergistically to provide adequate sensitivity while avoiding the acid diffusion problems of chemically amplified systems, thus resolving the contradiction between resolution and sensitivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The laminate achieves high sensitivity and resolution in photolithography, effectively reducing the impact of acid diffusion and shot noise, enabling precise micropatterning with improved CDU and LWR, particularly for small feature sizes.
Implementation Method 1
resist compositions based on PMMA or HSQ are largely affected by stochastics, failing to gain the desired resolution
Implementation Method 2
a resist composition comprising a polymer and a photopolymerization initiator, wherein the photopolymerization initiator generates a radical upon irradiation
Implementation Method 3
It is a positive resist material which increases solubility in organic solvent developer through the mechanism that the molecular weight becomes lower as a result of scission of the main chain upon EUV exposure
Implementation Method 4
Hydrogensilsesquioxane (HSQ) is a negative resist material which turns insoluble in alkaline developer through crosslinking by condensation reaction of silanol generated upon EUV exposure
Implementation Method 5
a resist composition comprising a polymer and a photopolymerization initiator, wherein the photopolymerization initiator generates a radical upon irradiation
Data Source
AI summary
A laminate includes a substrate, an adherent film formed thereon from a composition comprising a polymer and an organic solvent, and a resist film formed on the adherent film from a resist composition comprising a hypervalent iodine compound, a carboxy-containing compound and a solvent. When the laminate is processed by EB or EUV lithography, the resist film exhibits a high sensitivity and maximum resolution.