Laminated EUV Resist Film for Precise Patterning Without Collapse
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate processing methods face challenges in efficiently forming and selectively removing exposed portions of resist films using extreme ultraviolet light, particularly in the context of semiconductor manufacturing.
Innovation Solution
A substrate processing method involving the formation of a laminated structure film with alternating metal-containing and halogen-containing layers, followed by EUV light exposure and selective removal of the exposed portion using EUV light and development processing, including wet or dry processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thin resist film is formed to enable precise pattern formation, then manufacturing precision is improved, but the film becomes prone to pattern collapse
Solution Approach 1:
The patent applies composite materials by creating a laminated structure film comprising a metal-containing layer and a halogen-containing layer. This composite structure combines the advantages of both materials: the metal-containing layer provides structural support to prevent pattern collapse, while the halogen-containing layer enables effective EUV light exposure and selective removal. The synergistic combination allows the use of thin film structures that maintain both mechanical stability and pattern formation precision.
2Device complexity
If a single-layer resist film is used to simplify the process, then device complexity is reduced, but selective removal capability and pattern precision are compromised
Solution Approach 1:
The patent applies segmentation by dividing the resist film into two distinct functional layers: a metal-containing layer and a halogen-containing layer. Each layer performs a specific function - the metal-containing layer provides structural integrity and controlled solubility, while the halogen-containing layer enhances EUV light sensitivity and selective removal capability. This segmentation allows each layer to be optimized independently for its specific function, achieving superior overall performance compared to a single-layer structure.
3Ease of operation
If conventional resist films are used with EUV exposure, then process simplicity is maintained, but selective removal efficiency and pattern definition are insufficient
Solution Approach 1:
The patent applies parameter changes by modifying the chemical composition and physical properties of the resist film. Specifically, it changes the material parameters by incorporating metal-containing compounds (such as tin, zinc, or calcium compounds) with specific solubility characteristics and halogen-containing compounds that enhance EUV light sensitivity. These parameter changes enable the resist film to achieve better pattern definition and selective removal efficiency while maintaining process compatibility with existing EUV lithography systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of a thin resist film with selectively removable exposed portions, reducing pattern collapse and allowing for precise pattern formation in semiconductor wafers.
Implementation Method 1
irradiating the laminated structure film with extreme ultraviolet light in a predetermined pattern to form, in the laminated structure film, an exposed portion irradiated with the extreme ultraviolet light and an unexposed portion not irradiated with the extreme ultraviolet light
Data Source
AI summary
A substrate processing method is provided and includes forming a laminated structure film over a substrate, the laminated structure film including a metal-containing layer and a halogen-containing layer that are laminated; irradiating the laminated structure film with extreme ultraviolet light in a predetermined pattern to form, in the laminated structure film, an exposed portion irradiated with the extreme ultraviolet light and an unexposed portion not irradiated with the extreme ultraviolet light; and selectively removing the exposed portion of the laminated structure film.