Laminated Image Sensor Pixels Using Organic Semiconductors
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Solution Overview
Problem
Existing image sensors with light-receiving pixels for primary colors (red, green, and blue) either suffer from reduced resolution or image blurring due to substrate thickness or manufacturing complexities, particularly when trying to laminate multiple layers with silicon semiconductor circuits and flexible substrates.
Innovation Solution
An image sensor design featuring a substrate with laminated secondary light-receiving pixels sensitive to different wavelengths, separated by sealing insulation layers, and utilizing thin film transistors with oxide or organic semiconductor active layers, allowing for high-resolution full-color image capture without intermediate substrates and enabling flexible substrate use.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If three kinds of light-receiving pixels for primary colors are arrayed on a substrate, then full color image pickup is achieved, but resolution becomes one third compared to monochromatic image sensor
Solution Approach 1:
The patent transitions from planar arrangement of pixels to three-dimensional laminated structure, stacking multiple monochromatic pixel layers in the thickness direction. This dimensional change allows each layer to maintain high resolution while the combination of layers provides full color capability, resolving the contradiction between color versatility and resolution.
2Measurement precision
If image receiving pixels for multiple colors are superposed on separate substrates, then resolution is improved, but a gap equivalent to substrate thickness is formed causing image blurring
Solution Approach 1:
The patent merges multiple monochromatic pixel layers into a single integrated structure with minimal spacing, eliminating the need for separate substrates and the gaps between them. This combining approach maintains high resolution while preventing image blurring by removing the intermediate substrate that causes optical separation.
3Object-affected harmful factors
If transmission and read-out circuit is formed by silicon semiconductor on substrate, then image blurring is prevented, but flexible substrate cannot be used due to high temperature process requirement
Solution Approach 1:
The patent changes the material parameter from silicon semiconductor to organic semiconductor, which enables low-temperature processing. This parameter change allows the use of flexible substrates while maintaining the ability to form transmission and read-out circuits that prevent image blurring, resolving the contradiction between blurring prevention and flexible substrate compatibility.
4Adaptability or versatility
If multiple layers are laminated with silicon semiconductor circuits, then full color image pickup is achieved, but manufacturing complexity increases significantly
Solution Approach 1:
The patent changes the material parameter from silicon semiconductor to organic semiconductor, enabling low-temperature processing and simplified manufacturing. This allows multiple layers to be laminated with flexible substrates using less complex processes, reducing manufacturing complexity while maintaining full color image pickup capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances image resolution, prevents blurring, and facilitates the use of flexible substrates, enabling miniaturization and reduced weight in image sensors while maintaining high sensitivity and low power consumption.
Implementation Method 1
a photoelectric conversion portion that photoelectrically converts the light
Data Source
AI summary
An image sensor 1 has a substrate 2 and primary light-receiving pixels 4 arrayed in the direction of the surface of the substrate, and the primary light-receiving pixels are formed by laminating plural secondary light-receiving pixels 10, 20 and 30 which sense lights in different wavelength ranges, respectively, via at least sealing insulation layers 18 and 28 between adjacent secondary light-receiving pixels in the thickness direction. Each secondary light-receiving pixel includes a photoelectric conversion portion 14, 24, or 34 for photoelectrically converting the lights and a signal output portion 12, 22 or 32 for outputting signals from a thin film transistor 40 according to charges generated by the photoelectric conversion portion, and the active layer 48 of the thin film transistor is formed from an oxide semiconductor or organic semiconductor.