Laminated Semiconductor Substrate Deep Concave Etching
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Solution Overview
Problem
Conventional semiconductor devices face challenges in deep concave part formation for mounting semiconductor elements due to the thickness limitations of silicon wafers, leading to increased manufacturing costs and reduced productivity, along with variations in concave part flatness affecting yield.
Innovation Solution
A semiconductor device is manufactured using a laminated substrate with a silicon oxide film junction layer, allowing for deep concave part formation by etching, which improves the mounting depth and processing accuracy, and enables the use of cheaper silicon substrates while maintaining stability and freedom in element mounting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If a special substrate thicker than conventional silicon substrates is made to increase concave part depth, then the concave part depth increases, but the manufacturing cost increases
Solution Approach 1:
The substrate is divided into multiple conventional-thickness silicon wafers that are laminated together. The concave part is formed by etching through these stacked wafers, allowing deep concave parts to be created using standard-thickness substrates rather than requiring a single thick substrate.
Solution Approach 2:
The solution transitions from increasing thickness in one dimension (using a single thick substrate) to achieving depth through stacking multiple thinner layers (adding the dimension of layering). This allows deep concave parts to be formed by etching through the stacked structure rather than requiring a monolithic thick substrate.
2Length of stationary object
If the concave part is deeply formed, then the mounting depth increases, but the variation in flatness of the concave part increases and yield decreases
Solution Approach 1:
By dividing the substrate into multiple thin wafers, the etching process can proceed through each layer with better control over flatness and depth uniformity, reducing the variation that would occur in a single deep etch through a thick substrate.
Solution Approach 2:
The wafers are pre-laminated with junction layers before the concave part formation. This preliminary structuring provides reference planes and control mechanisms that help maintain flatness and reduce variation during subsequent etching processes.
3Ease of manufacture
If conventional silicon substrates are used, then the manufacturing cost is lower, but the depth of concave part that can be formed is limited
Solution Approach 1:
Multiple conventional-thickness silicon wafers are stacked to achieve the equivalent of a thick substrate, allowing deep concave parts to be formed while using only standard-thickness, cost-effective silicon wafers.
Solution Approach 2:
The substrate becomes a composite structure of multiple silicon wafers bonded together with junction layers. This composite approach combines the cost advantages of conventional thin wafers with the functional benefits of a deep concave part structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the construction of semiconductor devices with improved productivity and deeper concave parts, enhancing the mounting of semiconductor elements with better accuracy and reduced cost, while maintaining stability and flexibility in element placement.
Implementation Method 1
a structure in which a plurality of semiconductor substrates are made of silicon substrates, with being laminated by a junction layer of a silicon oxide film
Implementation Method 2
allowing for deep concave part formation by etching
Data Source
Figure 1A~1C
Figure 1D~1F
Figure 1G~2B
AI summary
A semiconductor device includes a laminated substrate (104; 204) formed by laminating a plurality of semiconductor substrates (101, 103; 201, 203), a concave part (103B; 208) formed in the laminated substrate, and a semiconductor element (109; 211, 213) mounted in the concave part. A method of manufacturing a semiconductor device includes a first step of forming a laminated substrate by laminating a plurality of semiconductor substrates, a second step of forming a concave part by etching the laminated substrate, and a third step of mounting a semiconductor element in the concave part.