Laminated Shunt Resistor Layout for Smaller Semiconductor Packages

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Solution Overview

Problem

Existing shunt resistors in semiconductor devices often require larger form factors due to the need for separate mounting surfaces for electrodes, which can increase the size of the semiconductor device and hinder miniaturization efforts.

Innovation Solution

A shunt resistance design featuring a resistive element layer with first and second electrode layers laminated on both sides, allowing for compact mounting configurations and reduced device size by enabling the electrodes to be mounted on both sides of the resistive element layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If separate mounting surfaces for electrodes are provided, then the shunt resistor can be mounted properly, but the form factor increases

Engineering Contradiction:
Improvemounting capabilityVSAvoidform factor
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

The electrode layers are integrated directly onto the resistive element layer, merging the electrode function with the resistive element structure. This eliminates the need for separate mounting surfaces while maintaining proper electrical connection and mounting capability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The electrode layers are positioned on both sides of the resistive element layer in the thickness direction, utilizing the z-dimension for electrode placement. This allows mounting surfaces to be formed on both sides of the shunt resistor, reducing the planar footprint while maintaining mounting functionality.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of stationary object

If the shunt resistor size is reduced, then device miniaturization is achieved, but mounting stability may be compromised

Engineering Contradiction:
Improvedevice sizeVSAvoidmounting stability
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

By positioning electrode layers on both sides of the resistive element layer in the thickness direction, the mounting surfaces are distributed across both sides of the shunt resistor. This three-dimensional electrode arrangement provides stable mounting capability while reducing the planar area occupied by the device.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250031392A1Shunt resistance, method of manufacturing shunt resistance, and semiconductor device
Publication Date: 2025.01.23 ROHM CO LTD
  • US20250031392A1 patent drawing
  • US20250031392A1 patent drawing
  • US20250031392A1 patent drawing

AI summary

Provided is a shunt resistance including a resistive element layer, a first electrode layer laminated on a first side in a thickness direction of the resistive element layer, and a second electrode layer laminated on a second side in the thickness direction of the resistive element layer.