Conductive Landing Pad Selective Deposition for Interconnect Shorts
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Solution Overview
Problem
In semiconductor processing, the re-deposition of conductive landing pad material on the sidewalls during the patterning of conductive metal-containing structures leads to yield degradation and unwanted shorts, which are not effectively addressed by existing technologies.
Innovation Solution
A conductive landing pad structure is formed using selective deposition on the surface of an electrically conductive structure embedded in a dielectric material layer, ensuring that the conductive metal-containing structure is patterned without re-deposition of landing pad material on its sidewalls through ion beam etching or wet chemical etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If blanket layers of conductive landing pad and conductive metal-containing material are patterned utilizing ion beam and/or chemical wet etching process, then the conductive metal-containing structure is formed, but conductive landing pad material is re-deposited on the sidewalls of the patterned conductive metal-containing material causing yield degradation and unwanted shorts
Solution Approach 1:
A dielectric material layer is introduced as an intermediary between the conductive landing pad and the conductive metal-containing material. This dielectric layer acts as a barrier that prevents the re-deposition of conductive landing pad material onto the sidewalls of the conductive metal-containing structure during the etching process, thereby eliminating the harmful effect while maintaining the patterning capability
Solution Approach 2:
The harmful re-deposited conductive landing pad material is extracted or removed from the sidewall surface through the dielectric barrier, preventing it from causing shorts or yield degradation. The dielectric layer effectively separates and isolates the re-deposited material from the conductive structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents shorts and mitigates yield degradation by ensuring that the conductive metal-containing structure remains free of re-deposited landing pad material on its sidewalls, resulting in a more reliable semiconductor structure.
Implementation Method 1
A conductive landing pad structure is formed utilizing a selective deposition process on a surface of an electrically conductive structure
Implementation Method 2
During the formation of the conductive metal-containing structure which includes ion beam etching
Implementation Method 3
During the formation of the conductive metal-containing structure which includes ion beam etching and/or a wet chemical etch
Data Source
AI summary
A conductive landing pad structure is formed utilizing a selective deposition process on a surface of an electrically conductive structure that is embedded in a first dielectric material layer. The conductive landing pad structure is located on an entirety of a surface of the electrically conductive structure and does not extend onto the first dielectric material layer. A conductive metal-containing structure is formed on a physically exposed surface of the conductive landing pad structure. During the formation of the conductive metal-containing structure which includes ion beam etching and/or a wet chemical etch, no conductive landing pad material particles re-deposit on the sidewalls of the conductive metal-containing structure.