Lanthanide Thin Film Precursor for Low-Viscosity High-k Deposition
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Solution Overview
Problem
Existing silicon-based dielectrics in semiconductor elements face limitations in forming high-quality thin films due to increased leakage current and high viscosity of traditional precursors, which are often solids or liquids with low volatility, hindering the miniaturization of capacitor structures.
Innovation Solution
A lanthanide metal-containing precursor with a chemical structure including a cyclopentadienyl ligand and a novel amidinate ligand, characterized by low viscosity, high thermal stability, and high volatility, is used to form a high-quality thin film through processes like ALD, CVD, and PECVD.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional precursors (solids or liquids with low volatility) are used for thin film formation, then the precursor can be stored and handled, but the viscosity is high and volatility is low, causing problems in deposition processes
Solution Approach 1:
The patent changes the physical and chemical parameters of the precursor by introducing specific ligand structures (amidinate and cyclopentadienyl) that fundamentally alter the molecular weight, intermolecular forces, and thermal properties. This transforms the precursor from high-viscosity low-volatility compounds to low-viscosity high-volatility compounds suitable for deposition processes
Solution Approach 2:
The patent creates composite coordination compounds by combining lanthanide metal centers with specific organic ligands (amidinate and cyclopentadienyl). This composite structure achieves optimal balance between stability (from metal-ligand coordination) and volatility (from organic ligand properties)
2Ease of manufacture
If silicon-based dielectrics are used in capacitor structures, then the manufacturing process is established, but the leakage current increases and bandgap limitations prevent further miniaturization
Solution Approach 1:
The patent changes the material parameter (dielectric constant) by introducing lanthanide metal-containing compounds with higher permittivity than silicon-based dielectrics. This allows thinner films to achieve the same capacitance, enabling miniaturization while maintaining electrical performance
Solution Approach 2:
The patent replaces established silicon-based dielectrics with alternative lanthanide-based materials that, while newer, provide superior electrical properties for capacitor applications, effectively making the older silicon-based approach obsolete for this specific application
3Quantity of substance
If high-dielectric thin films are applied to replace silicon-based dielectrics, then the capacitance is improved, but the leakage current is significantly increased
Solution Approach 1:
The patent optimizes multiple parameters simultaneously: the ligand structure controls both the dielectric constant (through metal coordination geometry and electron distribution) and the bandgap (through molecular orbital structure). This coordinated parameter optimization achieves high permittivity while maintaining low leakage current
Solution Approach 2:
The patent creates composite structures where the organic ligand framework provides structural integrity and electronic properties, while the lanthanide metal center provides high polarizability for increased permittivity. This composite approach separates the functions of high-k (from metal) and low leakage (from organic framework)
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The precursor enables the formation of high-quality thin films with improved electrical properties, reducing leakage current and enhancing integration density in semiconductor elements.
Implementation Method 1
forming a precursor thin film through deposition of the precursor for forming the thin film onto the surface of the substrate
Implementation Method 2
reacting the precursor thin film with a reactive gas
Implementation Method 3
forming a precursor thin film through deposition of the precursor for forming the thin film onto the surface of the substrate
Data Source
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AI summary
The present invention relates to: a precursor for forming a lanthanide metal-containing thin film, the precursor being characterized by comprising a compound represented by chemical formula 1; a method for forming a lanthanide metal-containing thin film using same; and a semiconductor element including the lanthanide metal-containing thin film. The precursor includes a lanthanide metal core, a cyclopentadienyl ligand providing properties such as a low melting point and high volatility, and a novel amidinate ligand that provides high structural stability, low viscosity, high volatility, high thermal stability, and properties such as being a liquid at room temperature or a solid with a low melting point. Therefore, the precursor exhibits physical properties suitable for use in a thin film formation process and thus can be used to form a high-quality thin film.