Lanthanum Boride TFT Active Layer for Indium-Free Displays
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Solution Overview
Problem
The high cost and limited availability of indium in oxide semiconductors used in thin film transistors (TFTs) for display devices, leading to increased production costs and sustainability issues, necessitate the development of alternative semiconductor materials.
Innovation Solution
The use of lanthanum boride as a semiconductor active layer in TFTs, which reduces indium usage and leverages the greater abundance and lower consumption of lanthanum, enhancing electron mobility and conductivity, thereby improving the on/off current ratio and display performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductor containing indium is used as active layer, then high mobility and high on-state current are achieved, but production cost increases and mass production is limited
Solution Approach 1:
The patent changes the material composition parameter by replacing indium-based oxide semiconductor with lanthanum boride, maintaining the semiconductor properties while eliminating dependence on scarce and expensive indium resources
Solution Approach 2:
The patent substitutes expensive indium with abundant and cheaper lanthanum boride material, making mass production economically viable while maintaining device performance
2Reliability
If oxide semiconductor containing indium is used as active layer, then high mobility and high on-state current are achieved, but indium availability decreases and sustainability is compromised
Solution Approach 1:
The patent fundamentally changes the material composition from indium-based to lanthanum-based semiconductor, eliminating the consumption of scarce indium while maintaining high mobility through the unique electronic structure of lanthanum boride
Solution Approach 2:
The patent replaces scarce indium with abundant lanthanum boride material, ensuring sustainable mass production by eliminating dependence on limited indium resources
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of lanthanum boride in TFTs decreases production costs, increases the on/off current ratio, prevents current leakage, and enhances charging rates, resulting in improved display effects and sustainable usage.
Implementation Method 1
The lanthanum boride pattern is semiconducting. The lanthanum boride pattern has a concentration of carries of 10^15 to 10^18 atoms/cm³
Data Source
Figure 1~2b
Figure 2c~3
Figure 4~5
AI summary
The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.