Semiconductor Laser Active Layer Height Equalization
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Solution Overview
Problem
Conventional semiconductor laser devices manufacturing methods require equal heights for active layers of infrared and red laser emitting elements, leading to increased material usage and manufacturing costs due to the need for thick second lower clad layers and additional film formation steps.
Innovation Solution
A semiconductor laser emitting device with an etching stop layer and a third lower clad layer on the entire substrate surface, allowing for equal active layer heights without the need for a thick second lower clad layer or an embankment layer, reducing material and time requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thick second lower clad layer is formed to equalize active layer heights, then manufacturing precision is improved, but manufacturing cost and material usage increase
Solution Approach 1:
The second lower clad layer is segmented into two distinct parts: a first region formed directly on the substrate and a second region formed on the embankment layer. This segmentation allows each region to have optimized thickness, where the second region can be thinner since it sits on an elevated surface, thereby reducing total material usage while maintaining the required active layer height equality.
Solution Approach 2:
The patent introduces a vertical dimension by forming an embankment layer that elevates the second region of the second lower clad layer. This dimensional change allows the active layers to be positioned at equal heights without requiring a uniformly thick second lower clad layer across the entire substrate, thus reducing material consumption.
2Manufacturing precision
If an embankment layer is added to equalize active layer heights, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The embankment layer is merged with the second lower clad layer such that the second region of the second lower clad layer is formed directly on the embankment layer. This integration reduces the number of discrete structural elements and simplifies the manufacturing process by combining height adjustment and active layer formation into a unified structure.
3Manufacturing precision
If additional film formation steps are performed, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The embankment layer is formed in advance before depositing the second lower clad layer. This preliminary action establishes the height reference early in the manufacturing process, allowing subsequent layers to be deposited at controlled thicknesses without requiring multiple corrective film formation steps, thereby improving overall manufacturing efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs and time by eliminating the need for additional film formation steps and material usage, while maintaining equal active layer heights and enhancing luminance by minimizing light absorption.
Implementation Method 1
an etching stop layer formed on an entire upper surface of the third lower clad layer
Implementation Method 2
an infrared laser emitting element for infrared light emission including a first lower clad layer, a first active layer and a first upper clad layer which are laminated one upon another, and a red laser emitting element for red light emission including a second lower clad layer, a second active layer and a second upper clad layer
Data Source
AI summary
A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first active layer 12 and a first upper clad layer 13, and the red element 4 includes a laminate of a second lower clad layer 21, a second active layer 22 and a second upper clad layer 23. The clad layer 11 includes a third lower clad layer 17 formed on the substrate 2, an etching stop layer 18 formed on the third lower clad layer 17, and a fourth lower clad layer 19 formed on the etching stop layer 18 at a region provided with the infrared element 3. The second lower clad layer 21 is formed on the etching stop layer 18 except at the region of the infrared element 3.