Semiconductor Laser Active Layer Composition for Low Stray Light
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor laser devices experience heat generation and stray/leakage light at the emergent end, which degrades the quality of the far-field front-focal plane image, and there is a need to minimize these issues.
Innovation Solution
A semiconductor laser component is designed with specific proportion distributions of elements Al, In, Si, Mg, and C in the active layer, and optimized refractive index and dielectric constant distributions in the waveguide layers to reduce heat generation and stray light, improving beam quality and far-field image.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If electrode injection is used near the output end face to generate laser light, then laser output power is improved, but heat generation and stray light increase at the emergent end
Solution Approach 1:
The patent extracts the harmful functions (heat generation and stray light) from the electrode injection region by relocating the electrode injection position away from the output end face. The active layer is designed with a specific structure where the electrode injection region is separated from the light emission region, thereby removing the source of harmful effects while preserving the laser generation function.
Solution Approach 2:
The patent introduces an intermediary structure (the specific active layer configuration with defined Al, In, Si, Mg, and C element distributions) that mediates between the electrode injection region and the output end face. This intermediary structure allows laser light to pass through while blocking or redirecting stray light and heat away from the emergent end.
2Illumination intensity
If high current density is used to achieve laser operation, then laser brightness and output power are improved, but electron leakage and Auger recombination increase causing severe Droop effect
Solution Approach 1:
The patent applies local quality by creating non-uniform distributions of Al, In, Si, Mg, and C elements within the active layer. Each element is strategically positioned in regions where it can maximize its beneficial effect (e.g., Al for confinement, In for gain, Si and Mg for doping, C and O for defect reduction) while minimizing harmful effects like electron leakage and Auger recombination in high-current regions.
Solution Approach 2:
The patent changes the compositional parameters of the active layer by precisely controlling the content ratios and spatial distributions of multiple elements (Al, In, Si, Mg, C, O). These parameter changes optimize the electrical and optical properties of the active layer, reducing electron leakage and Auger recombination losses while maintaining high brightness output.
3Ease of manufacture
If conventional active layer composition is used, then manufacturing is simplified, but heat loss and thermal stress increase reducing beam quality
Solution Approach 1:
The patent uses a composite material approach by combining multiple elements (Al, In, Si, Mg, C, O) in specific ratios and distributions within the active layer. This composite structure achieves superior thermal management and optical properties compared to conventional single-element or simple alloy compositions, reducing heat loss and thermal stress while maintaining manufacturability through established semiconductor fabrication techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces heat loss, thermal stress, and stray light, enhancing the beam quality factor and far-field image quality by 86% and 88%, respectively, compared to conventional devices.
Implementation Method 1
A laser of the laser device is generated by carriers undergoing excited radiation, a spectral full width at half maximum (FWHM) is small, a brightness is very high
Implementation Method 2
The LED is that under the action of an external voltage, electron holes jump to an active layer or a p-n junction to produce radiative recombination light
Data Source
AI summary
Embodiments of the present disclosure provide a semiconductor laser component, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper limiting layer. The active layer satisfies at least one of that a content ratio of an element Al to an element H satisfies a first preset proportion distribution, a content ratio of an element In to the element H satisfies a second preset proportion distribution, a content ratio of an element Si to the element H satisfies a third preset proportion distribution, a content ratio of an element Mg to the element H satisfies a fourth preset proportion distribution, and a content ratio of an element C to an element O satisfies a fifth preset proportion distribution.