Surface-Emitting Laser Adhesion via Roughened Oxide Interface
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Solution Overview
Problem
Existing methods for manufacturing surface-emitting semiconductor laser elements face challenges in achieving long-term reliability, particularly in high-temperature and high-humidity environments, due to limited adhesiveness between insulating films and semiconductor layers, leading to potential peeling or disconnection of electrode wiring.
Innovation Solution
A method involving the formation of a rough surface region through oxidation and acid treatment of the semiconductor layer, enhancing adhesiveness by increasing the contact area between the rough surface formation layer and the interlayer insulating film, which includes processes like etching, oxidation, and buffered fluorine treatment to create submicron irregularities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional flat interface is used between the insulating film and semiconductor layer, then the manufacturing process is simple, but the adhesiveness is insufficient leading to peeling in harsh environments
Solution Approach 1:
The patent applies preliminary action by performing oxidation treatment and acid treatment on the semiconductor layer surface before depositing the insulating film. This pre-treatment creates a rough surface structure that enhances adhesiveness, preventing peeling issues that would occur with a conventional flat interface. The rough surface is formed in advance to ensure proper bonding before subsequent manufacturing steps.
Solution Approach 2:
The patent applies local quality by creating a rough surface structure only at the interface region between the insulating film and semiconductor layer, while keeping other regions of the semiconductor layer intact. The oxidation and acid treatments are selectively applied to specific areas to generate the rough surface morphology needed for enhanced adhesiveness, without affecting the overall device structure or requiring complex global modifications.
2Reliability
If the semiconductor layer surface is treated to enhance adhesiveness, then reliability in high-temperature and high-humidity environments improves, but the manufacturing process becomes more complex
Solution Approach 1:
The patent applies parameter changes by modifying the surface properties of the semiconductor layer through oxidation treatment and acid treatment. These treatments change the surface morphology from smooth to rough, and alter surface chemistry to enhance adhesiveness. By changing these surface parameters, the patent achieves improved humidity resistance and reliability without requiring fundamentally different manufacturing equipment or complex multi-step processes.
3Reliability
If a rough surface region is formed through oxidation and acid treatment, then the contact area between layers increases enhancing adhesiveness, but the manufacturing time increases
Solution Approach 1:
The patent applies merging by combining the oxidation treatment and acid treatment into a integrated surface preparation process. Rather than performing these treatments as separate, time-consuming steps, they are merged into a coordinated sequence that efficiently creates the rough surface structure. This combination reduces the total manufacturing cycle time while still achieving the desired adhesiveness enhancement through the rough surface morphology.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly enhances the humidity resistance and adhesiveness between the semiconductor layer and the insulating film, improving the reliability of surface-emitting semiconductor laser elements in harsh environments by forming a robust interface.
Implementation Method 1
a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure
Implementation Method 2
a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer
Data Source
AI summary
Provided is a method of manufacturing a surface-emitting semiconductor laser element including a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror, a rough surface formation layer, an active region, a second semiconductor multilayer reflection mirror, and a current confining layer, a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed, a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure, a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer, and a fifth process of forming an insulating film on the region including the rough surface region.