3D Feature Creation via Selective Laser Annealing
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Solution Overview
Problem
Current methods for creating three-dimensional features in microelectronic device packages using Indium/Bismuth layers are costly and time-consuming, requiring additional process steps and cycle time due to the need for removal by etching chemistry.
Innovation Solution
The use of selective laser annealing or laser ablation on solder and underlying solder supporting materials to form three-dimensional features, which eliminates the need for etching and reduces process complexity and cost by employing commercially available lasers for rapid and flexible feature creation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If lithographic patterning of multiple layers is used to create 3D features, then manufacturing precision can be achieved, but device complexity and loss of time increase significantly
Solution Approach 1:
The patent extracts and removes the unnecessary etching step from the conventional multi-layer lithographic process. By using laser annealing and ablation directly on the solder layer, the method eliminates the need for separate etching chemistry steps, thereby reducing device complexity while maintaining manufacturing precision for creating 3D features
Solution Approach 2:
The patent replaces the chemical etching process with a laser-based thermal processing system. The laser annealing and ablation mechanism substitutes the mechanical/chemical etching system, achieving 3D feature creation through controlled heating and material removal without requiring multiple lithographic layers and etching steps
2Manufacturing precision
If lithographic patterning with multiple layers and etching chemistry is used, then 3D features can be formed, but productivity decreases due to extra process steps and cycle time
Solution Approach 1:
The patent merges the patterning and 3D feature formation steps into a single laser processing operation. By combining the functions of pattern definition and three-dimensional structure creation into one laser annealing/ablation step, the method eliminates multiple sequential process steps, thereby improving productivity while maintaining manufacturing precision
Solution Approach 2:
The patent performs preliminary laser annealing and ablation on the solder layer before final packaging assembly. This preliminary action creates the 3D features in advance, eliminating the need for subsequent etching steps and reducing the overall fabrication cycle time, thus improving productivity
3Manufacturing precision
If Indium/Bismuth layers are used as selective resists, then 3D features can be created, but cost increases due to material requirements and process complexity
Solution Approach 1:
The patent uses a disposable solder layer (锡层) as the resist material instead of expensive Indium/Bismuth layers. The solder layer is applied, selectively annealed and ablated by laser to create 3D features, and then removed or integrated into the final structure. This approach reduces material cost while maintaining manufacturing precision through the laser's selective processing capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for faster, cheaper, and more flexible creation of 3D features, enhancing the yield and hermeticity of microelectronic device packages by forming high-melting point alloys that constrain solder flow during sealing, thereby improving the packaging process.
Implementation Method 1
performing selective laser annealing or laser ablation to the solder and underlying solder supporting material
Implementation Method 2
performing selective laser annealing or laser ablation to the solder and underlying solder supporting material
Data Source
AI summary
A semiconductor device includes a solder supporting material above a substrate. The semiconductor device also includes a solder on the solder supporting material. The semiconductor device further includes selective laser annealed or laser ablated portions of the solder and underlying solder supporting material to form a semiconductor device having 3D features.