Laser Annealing Apparatus for Display Substrate Crystallization
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Solution Overview
Problem
The existing manufacturing process for organic light-emitting and liquid crystal display apparatuses is costly and time-consuming due to complex processes required for crystallizing amorphous silicon to polysilicon, and the apparatus configuration is similarly complex.
Innovation Solution
A laser annealing apparatus and method that includes a mounting unit, driving modules for adjusting mark masks, image modules for data acquisition, and a laser module to selectively convert amorphous silicon to crystalline silicon, reducing the laser annealing time and simplifying the process by forming crystalline silicon marks on preset areas of the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional crystallization processes are used to convert amorphous silicon to polysilicon, then the semiconductor layer can be formed for TFT manufacturing, but the process becomes costly and time-consuming with complex procedures
Solution Approach 1:
The patent replaces conventional thermal crystallization processes with laser-induced crystallization. The laser module irradiates the amorphous silicon layer to directly convert it to crystalline silicon without requiring complex thermal processing equipment, furnaces, or multiple heating stages, thereby simplifying the manufacturing system while achieving high-quality crystalline structures
Solution Approach 2:
The patent changes the crystallization method from thermal processing to laser processing by altering the energy input parameters. Instead of using prolonged thermal energy at elevated temperatures, the system uses concentrated laser energy with specific wavelength, power density, and pulse duration parameters to achieve rapid crystallization, reducing process time and complexity
2Manufacturing precision
If conventional crystallization methods are employed, then amorphous silicon can be converted to polysilicon, but the manufacturing time and cost increase significantly
Solution Approach 1:
The patent substitutes slow thermal diffusion-based crystallization with rapid laser-induced crystallization. The laser module delivers concentrated energy that instantly raises the temperature of the amorphous silicon layer above its melting point and controls the cooling rate to form crystalline structures, reducing crystallization time from hours to seconds and significantly improving manufacturing throughput
Solution Approach 2:
The patent employs pulsed laser irradiation where the laser module emits periodic laser pulses to the amorphous silicon layer. Each pulse delivers energy for localized melting and rapid solidification, and the periodic nature of pulsing allows precise control over crystallization depth and quality while maintaining high processing speed and productivity
3Manufacturing precision
If mark masks are used for alignment during laser annealing, then precise patterning can be achieved, but the apparatus configuration becomes more complex
Solution Approach 1:
The patent merges the alignment function into the laser module itself by equipping it with an imaging device. The imaging device captures images of the substrate to identify alignment marks, and the controller uses this information to adjust the laser beam position, eliminating the need for separate mark masks and their associated driving mechanisms, thereby simplifying the overall apparatus configuration
Solution Approach 2:
The laser module performs its own alignment function by incorporating an imaging device that detects alignment marks on the substrate. The system uses the substrate's own features for alignment rather than requiring external alignment aids, enabling the apparatus to self-align and reducing the number of additional components needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the laser annealing time and simplifies the manufacturing process, enhancing the yield and efficiency of producing display apparatuses with crystalline silicon active layers.
Implementation Method 1
a laser module configured to radiate a laser beam to the substrate to change at least a part of an amorphous silicon layer of the substrate to crystalline silicon
Implementation Method 2
radiate a laser beam to preset areas of the substrate to change at least a part of the amorphous silicon layer of the substrate to crystalline silicon
Implementation Method 3
the laser module may be configured to radiate a laser beam to the first mark mask and the second mark mask to respectively form a first mark and a second mark on the amorphous silicon layer of the substrate. In this case, the laser module may form a first crystalline silicon mark and a second crystalline silicon mark on the amorphous silicon layer
Data Source
AI summary
A laser annealing apparatus reduces laser annealing time and has a simple configuration. A laser annealing method is used to manufacture a display apparatus. The laser annealing apparatus includes a mounting unit, a substrate mounted on the mounting unit, first and second driving modules installed on the mounting unit and adjusting locations of first and second mark masks to be placed on a part of the substrate, first and second image modules that may obtain image data regarding the first and second mark masks to be location-adjusted by first and second driving modules, and a laser module that radiates a laser beam to the substrate and changes at least a part of an amorphous silicon layer of the substrate to crystalline silicon.