Laser Annealing Resistor Matrix for Uniform Heating
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Solution Overview
Problem
CMOS semiconductor devices manufactured using Laser Spike Anneal (LSA) exhibit significant resistance variation due to uneven heating patterns, affecting the performance of resistors in the devices.
Innovation Solution
A method involving a semiconductor wafer with a resistor pattern arranged in a matrix, where the resistor pattern is heated using a first beam and then scanned with a second beam in a different direction to compensate for initial resistance variations, ensuring the resistance values fall within an allowable range by adjusting the scan direction and power of the laser beams.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the entire surface of the wafer is heated by scanning with a single laser beam, then annealing is achieved, but resistance variation occurs due to uneven heating patterns
Solution Approach 1:
The patent divides the wafer surface into multiple scanning zones and uses multiple laser beams to heat different regions simultaneously. This segmentation approach distributes the heating load across multiple independent beam paths, reducing the cumulative thermal gradients and scanning artifacts that cause resistance variation in single-beam systems.
Solution Approach 2:
The patent combines multiple laser beams to illuminate the wafer surface concurrently. By merging the heating effects of multiple beams with different scan directions and patterns, the system achieves more uniform energy distribution across the wafer, compensating for the non-uniformity inherent in single-beam scanning and thereby reducing resistance variation.
2Use of energy by moving object
If laser beam scanning is used for millisecond anneal, then energy is supplied for annealing, but characteristic variation occurs in CMOS devices
Solution Approach 1:
The patent employs dynamic control of multiple laser beams with different scan directions, speeds, and power levels. This dynamic configuration allows real-time adjustment of energy distribution to compensate for process variations and maintain consistent annealing quality across different wafer regions, thereby improving device characteristic consistency while preserving the high-energy annealing benefit.
Solution Approach 2:
The patent systematically varies multiple laser beam parameters including scan direction, scan speed, power level, and beam positioning. By optimizing these parameters across multiple beams, the system achieves more uniform energy delivery and thermal profile control, reducing the characteristic variation in CMOS devices while maintaining the necessary annealing energy supply.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces resistance variation by compensating for initial heating patterns, resulting in more consistent and reliable semiconductor device performance.
Implementation Method 1
The entire surface of a wafer is heated by scanning the surface of the wafer with laser beam
Implementation Method 2
heating a semiconductor wafer by scanning the semiconductor wafer with laser beam
Implementation Method 3
Millisecond anneal is used for immediately supplying energy necessary for annealing
Data Source
AI summary
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes heating a resistor pattern by scanning the resistor pattern with a first beam. The resistor pattern includes resistors, and a connection structure connecting the resistors in series. The resistors is arranged in matrix of two or more rows and two or more columns. The method includes further heating the resistor pattern by scanning the resistor pattern with a second beam having a different scan direction as that of the first beam.