Laser Annealing Thickness Control for Semiconductor Activation
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Solution Overview
Problem
The challenge in semiconductor manufacturing is achieving uniform activation of semiconductor layers during laser annealing, particularly when the thickness of semiconductor substrates varies, leading to uneven heat distribution and activation.
Innovation Solution
A method and apparatus where the thickness of each semiconductor substrate is measured using self-thickness data and reference thickness data from other substrates to control the laser beam, ensuring uniform heat input during laser annealing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the thickness of semiconductor substrates is reduced to meet market demand for low loss, then the electrical performance is improved, but the uniformity of heat capacity between thick and thin portions deteriorates, leading to ununiformed activation in the semiconductor layer
Solution Approach 1:
The patent applies local quality by adjusting the laser beam output according to the local thickness of each substrate. The controller individually controls the laser output for each substrate based on its measured thickness, ensuring that each region receives appropriate heat treatment regardless of thickness variations, thereby achieving uniform activation across the semiconductor layer.
Solution Approach 2:
The patent changes the laser beam output parameter based on the thickness of each substrate. By measuring the thickness of each substrate and adjusting the laser output accordingly, the system compensates for thickness variations and maintains uniform heat input, resolving the contradiction between reduced thickness and uniform activation.
2Ease of manufacture
If laser annealing is performed on substrates with varying thicknesses using fixed laser output, then the manufacturing process is simple, but the activation uniformity across different substrates deteriorates
Solution Approach 1:
The patent implements feedback control by measuring the thickness of each substrate and using this information to adjust the laser beam output. The controller receives thickness data from the measurement unit and automatically adjusts the laser parameters to compensate for thickness variations, achieving uniform activation while maintaining automated control.
Solution Approach 2:
The system performs self-adjustment by automatically measuring substrate thickness and controlling laser output without manual intervention. The controller autonomously processes thickness data and adjusts laser parameters, enabling the manufacturing process to adapt to individual substrate characteristics while maintaining operational simplicity.
3Manufacturing precision
If thickness measurement and individualized laser control is implemented for each substrate, then activation uniformity is improved, but the device complexity and measurement requirements increase
Solution Approach 1:
The patent applies universality by using a single laser annealing apparatus that can process multiple substrates with different thicknesses. The measurement unit and controller are designed to handle various substrate types and thickness ranges, providing a versatile solution that maintains uniform activation across different substrate specifications without requiring separate equipment for each case.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures more uniform activation of semiconductor layers by adjusting the laser beam based on both self-thickness and reference thickness data, improving the consistency of the semiconductor device manufacturing process.
Implementation Method 1
a measurement unit configured to measure the thickness of the semiconductor substrate
Implementation Method 2
the laser annealing treatment, which is one of the manufacturing steps of a semiconductor device, is a step of locally heating a semiconductor substrate using a laser to activate, for example, a semiconductor layer
Data Source
AI summary
Provided is a method for manufacturing a semiconductor device utilizing the feature that there are a plurality of semiconductor substrates to measure the thickness thereof, when measuring the thickness of a plurality of semiconductor substrates upon the laser annealing treatment. For each of at least one semiconductor substrate of the plurality of semiconductor substrates, a laser annealing treatment is performed by controlling a laser beam irradiating the semiconductor substrate based on self-thickness data being data of a result of measurement of a thickness of the semiconductor substrate and reference thickness data being data of a result of measurement of a thickness of at least one semiconductor substrate other than the semiconductor substrate among the plurality of semiconductor substrates.