Surface-Emitting Laser Aperture Doping for Beam Divergence Control
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Solution Overview
Problem
Surface emitting laser devices face challenges in controlling the divergence angle of beams and preventing current crowding at the aperture edge, leading to decreased optical characteristics and light efficiency due to irregular aperture shapes and increased current crowding.
Innovation Solution
A surface emitting laser device is designed with a substrate off-angle control and specific doping levels in the aperture region to maintain a circular aperture shape, incorporating an insulating region and a delta doped layer to manage current diffusion and beam divergence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the aperture region is formed without specific doping control, then the manufacturing process is simpler, but the aperture shape becomes irregular and current crowding increases
Solution Approach 1:
The patent applies parameter changes by controlling the doping concentration in the aperture region to be in the range of 1×10^18 to 1×10^19 atoms/cm³. This specific doping parameter range prevents irregular shape formation and current crowding while maintaining manufacturing feasibility through standard semiconductor doping processes.
2Object-generated harmful factors
If the aperture region has high doping concentration, then current crowding is reduced, but the aperture shape control becomes more difficult
Solution Approach 1:
The patent optimizes the doping concentration parameter to a specific range (1×10^18 to 1×10^19 atoms/cm³) that balances two opposing requirements: it is high enough to prevent current crowding at the aperture edge, but not so high as to cause irregular shape formation. This precise parameter control resolves the contradiction between current distribution and shape control.
3Device complexity
If the substrate off-angle is not controlled, then the manufacturing process is simpler, but the aperture shape becomes non-circular leading to increased beam divergence
Solution Approach 1:
The patent specifies a substrate off-angle parameter of 0.5° to 2.0° during the formation of the aperture region. This parameter control ensures that the aperture maintains a circular shape, which is critical for controlling beam divergence angle, while still being compatible with standard semiconductor manufacturing capabilities.
4Manufacturing precision
If the aperture shape is irregular, then the manufacturing tolerance is relaxed, but the beam divergence angle control and light efficiency decrease
Solution Approach 1:
The patent employs parameter changes in both substrate off-angle (0.5° to 2.0°) and doping concentration (1×10^18 to 1×10^19 atoms/cm³) to maintain a circular aperture shape. This ensures optimal beam divergence angle control and light efficiency while keeping manufacturing requirements within standard industrial capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively controls the divergence angle of beams and prevents current crowding, enhancing light efficiency and uniformity by maintaining a circular aperture shape and optimizing current distribution.
Implementation Method 1
incorporating an insulating region and a delta doped layer to manage current diffusion and beam divergence
Implementation Method 2
controls the divergence angle of beams by controlling the shape of an aperture
Data Source
AI summary
An embodiment relates to a surface-emitting laser element, a light-emitting device comprising same, and a method for manufacturing same. A surface-emitting laser element according to an embodiment may comprise: a substrate; a first reflective layer disposed on the substrate; an active layer disposed on the first reflective layer; an aperture region disposed on the active layer and including an aperture and an insulation region; and a second reflective layer disposed on the aperture region. The doping level of the aperture region may be (X+3)×XE18 (atoms/cm3) A ratio (b/a) of a second minimum diameter (b) to a first maximum diameter (a) of the aperture may be [95.0−(2X/3)]% to [99.9−(X/3)]%, wherein X may be 0 to 3.