Semiconductor Laser Array Layout for Speckle Noise Reduction
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Solution Overview
Problem
Existing semiconductor laser light sources do not adequately address speckle noise reduction, despite configurations aimed at achieving high output and utilizing multiple wavelengths.
Innovation Solution
The light-emitting device arrays semiconductor laser elements with specific emission peak wavelengths in a matrix arrangement, ensuring non-adjacency in the row direction and adjacency in the column direction, reducing speckle noise through controlled wavelength dispersion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If semiconductor laser elements are arrayed to emit light at multiple wavelengths for reducing speckle noise, then speckle noise is reduced, but the output is lowered
Solution Approach 1:
The array is divided into multiple rows, with each row containing laser elements of different wavelengths. This segmentation allows independent optimization of wavelength distribution in each row while maintaining high overall output through the combined effect of multiple rows.
Solution Approach 2:
Different rows are assigned different wavelength compositions tailored to local requirements. This enables each row to contribute optimally to speckle reduction while maintaining high output, with the overall array achieving both high power and effective speckle noise reduction through localized wavelength optimization.
2Power
If semiconductor laser elements with different temperature characteristics are arrayed to achieve higher output, then output is improved, but speckle noise reduction is insufficient
Solution Approach 1:
The array arrangement transitions from a single-dimensional temperature-based ordering to a two-dimensional matrix structure with M rows and N columns. This dimensional change enables simultaneous optimization of both temperature characteristics and wavelength distribution, achieving high output through temperature-based row arrangement while reducing speckle noise through wavelength-based column arrangement.
Solution Approach 2:
The invention changes the arrangement parameters from solely temperature-based positioning to a dual-parameter system considering both temperature characteristics and emission wavelengths. This parameter change enables the array to achieve high output through optimal temperature management while simultaneously reducing speckle noise through strategic wavelength distribution across the matrix structure.
3Device complexity
If laser elements are arranged in a simple sequence, then the structure is simple, but speckle noise reduction effectiveness is limited
Solution Approach 1:
The array is segmented into M rows and N columns with specific wavelength distribution patterns in each segment. This segmentation creates a structured approach to wavelength arrangement that enhances speckle noise reduction while maintaining manageable complexity through modular row and column organization.
Solution Approach 2:
Each row and column is assigned specific wavelength characteristics tailored to local optimization goals. This local quality approach enables effective speckle noise reduction through strategic wavelength placement in different array regions while maintaining overall structural simplicity through consistent row-column organization patterns.
Data Source
AI summary
A light-emitting device includes semiconductor laser elements including first color-light-emitting laser elements that emit red light, arrayed in a matrix of M rows and N columns (where M≥2 and N≥3). The first color-light-emitting laser elements include two or more first semiconductor laser elements each having an emission peak wavelength of smaller than 647 nm±2 nm, two or more second semiconductor laser elements each having an emission peak wavelength of smaller than 643 nm±2 nm, and two or more third semiconductor laser elements each having an emission peak wavelength of smaller than 639 nm±2 nm. In the M rows and the N columns, in whole or in part, a semiconductor laser element other than the two or more first semiconductor laser elements is adjacent to any one of the two or more first semiconductor laser elements.