Semiconductor Laser Assembly for High-Temperature Optical Output
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Solution Overview
Problem
Existing semiconductor laser elements face challenges in achieving a significant increase in optical output due to temperature-related issues, such as increased thermal resistance and carrier plasma absorption.
Innovation Solution
The semiconductor light emitting element assembly incorporates a semiconductor laser element with a laminated structure that includes a heat sink and a sub-mount, optimized to maintain a high temperature of the active layer, thereby widening the operating current range and increasing the maximum optical output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the temperature of the active layer is lowered by using a heat sink, then the optical output is improved, but the device complexity increases
Solution Approach 1:
The patent changes the temperature parameter from conventional low-temperature operation to high-temperature operation (50°C to 70°C). By optimizing the semiconductor laser element to operate at elevated temperatures, the need for complex cooling systems is eliminated while achieving higher optical outputs and wider operating current ranges.
2Power
If cooling measures are implemented to maintain low active layer temperature, then the optical output is maintained, but power consumption increases
Solution Approach 1:
The patent converts the harmful effect of heat generation into a beneficial operating condition. Instead of viewing high temperature as a problem to be solved through cooling, the invention optimizes the laser element to thrive at elevated temperatures, thereby eliminating the need for energy-consuming cooling systems while achieving higher optical outputs.
3Productivity
If the active layer temperature is increased, then the operating current range widens and maximum optical output increases, but thermal management becomes more challenging
Solution Approach 1:
The patent fundamentally changes the operating temperature parameter from conventional low temperatures to elevated temperatures (50°C to 70°C). This parameter change results in wider operating current ranges and higher maximum optical outputs, while the simplified structure naturally manages thermal conditions without complex active cooling.
Data Source
Figure 1A~1B
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AI summary
A semiconductor light emitting element has a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor light emitting element satisfies ΔI2 > ΔI1, where ΔI1 is an operating current range when the temperature of the active layer is T1, and ΔI2 is the operating current range when the temperature of the active layer is T2 (where T2 > T1). The semiconductor light emitting element satisfies P2 > P1, where P1 is a maximum optical output emitted when the temperature of the active layer is T1, and P2 is the maximum optical output emitted when the temperature of the active layer is T2 (where T2 > T1).