Laser-Assisted Epitaxy Wafer Heating for Temperature Uniformity
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Solution Overview
Problem
The existing epitaxy and etching processes in semiconductor manufacturing often result in non-uniformity across wafers due to heat loss through convection and radiation, leading to variations in thickness and quality of semiconductor layers.
Innovation Solution
A laser-assisted epitaxy and etching process using a lamp-based heating source with adjustable laser beams to selectively heat specific regions of the wafer, improving temperature uniformity and precision through controlled laser power, movement, and angle adjustments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional heating methods are used for epitaxy and etching, then the process can be performed on the entire wafer, but temperature non-uniformity occurs due to heat loss through convection and radiation
Solution Approach 1:
The patent applies local quality by using laser beams to selectively heat specific regions of the wafer rather than heating the entire wafer uniformly. The laser beam can be directed at different locations (center, edge, or specific patterns) to provide localized thermal energy where needed, compensating for heat loss in those specific areas and achieving overall temperature uniformity across the wafer surface.
Solution Approach 2:
The patent changes the heating parameters by introducing laser power as a controllable variable. By adjusting the laser power, duration, and positioning, the system can dynamically compensate for heat loss variations across the wafer surface, maintaining uniform temperature despite varying heat loss through convection and radiation at different locations.
2Temperature
If laser-assisted heating is applied to selected regions, then temperature uniformity improves, but device complexity increases
Solution Approach 1:
The patent makes the heating system multi-functional by using the same laser heating apparatus for different purposes: heating the wafer center, heating the wafer edge, or heating specific patterns. The laser system can be repositioned and reconfigured to serve multiple heating needs, reducing the requirement for separate heating devices for different regions and thereby limiting the increase in device complexity.
Solution Approach 2:
The patent introduces dynamic control to the heating system through movable laser positioning and adjustable laser power. The laser can be dynamically repositioned to different wafer locations and its power adjusted in real-time, allowing a single dynamic system to replace multiple static heating zones, thus managing complexity through flexibility rather than multiplication of components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity of semiconductor layer thickness and quality across the wafer, improving the yield and consistency of integrated circuit manufacturing by ensuring precise temperature control and localized heating.
Implementation Method 1
A laser beam is provided to selectively heat selected regions on the wafer
Implementation Method 2
A laser beam is provided to selectively heat selected regions on the wafer
Implementation Method 3
providing a heating source to heat the wafer
Data Source
AI summary
A method includes placing a wafer into a production chamber, providing a heating source to heat the wafer, and projecting a laser beam on the wafer using a laser projector. The method further includes, when the wafer is heated by both of the heating source and the laser beam, performing a process selected from an epitaxy process to grow a semiconductor layer on the wafer, and an etching process to etch the semiconductor layer.