Semiconductor Laser Element Carrier Assemblage Alignment
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Solution Overview
Problem
Current methods for producing semiconductor laser elements face challenges in achieving small positioning tolerances, leading to low throughput and high costs due to the need for precise alignment and limited production capacity.
Innovation Solution
A method involving a carrier assemblage with predetermined breaking locations, where a laser bar with multiple semiconductor laser diodes is fitted and then singulated to form individual laser elements, allowing for precise alignment and increased throughput by aligning the laser bar and carrier assemblage together before singulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If individual semiconductor laser diodes are positioned and aligned one by one, then positioning precision is improved, but production throughput deteriorates
Solution Approach 1:
The patent divides the semiconductor laser diode array into individual singulatable units while maintaining the ability to process multiple diodes simultaneously. The carrier assemblage is segmented into individual carriers, and the laser bar is segmented into individual diodes, allowing parallel processing that improves throughput while maintaining positioning precision through the group alignment approach.
Solution Approach 2:
The patent merges multiple semiconductor laser diodes onto a single carrier assemblage and aligns the entire group simultaneously. By fitting the laser bar containing multiple diodes to the carrier assemblage at once and then singulating, the method achieves both high positioning precision through group alignment and high throughput by processing multiple diodes in parallel rather than individually.
2Manufacturing precision
If precise alignment is performed for each laser diode, then positioning tolerance is improved, but production cost increases
Solution Approach 1:
The patent combines multiple laser diodes into a single laser bar structure that is fitted to the carrier assemblage as one unit. This merging approach allows precise alignment to be performed once for the entire group rather than individually for each diode, maintaining positioning tolerance while significantly reducing the time and cost associated with repeated alignment operations.
Solution Approach 2:
The patent performs alignment and fitting operations on the complete laser bar assembly before singulation. By establishing precise positioning relationships in advance while the diodes are still connected as a group, the method eliminates the need for costly and time-consuming individual alignment operations after separation, thereby reducing production costs while maintaining positioning tolerance.
3Productivity
If multiple laser diodes are processed simultaneously, then production throughput is improved, but alignment precision deteriorates
Solution Approach 1:
The patent merges multiple laser diodes into a unified laser bar structure with a common growth substrate that is fitted to the carrier assemblage as a single entity. This approach enables simultaneous processing of multiple diodes while maintaining alignment precision through the rigid structural relationship of the common substrate, preventing the precision deterioration that would normally occur with parallel processing.
Solution Approach 2:
The patent performs the alignment and fitting operation preliminarily while multiple diodes are still connected through their common growth substrate. This preliminary group alignment ensures that all diodes are precisely positioned relative to each other and to the carrier before singulation, maintaining alignment precision even though multiple diodes are being processed simultaneously in subsequent steps.
Data Source
AI summary
A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).