Laser Crystallization Beam Re-Entry Layout to Prevent Line Stains
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Solution Overview
Problem
Existing laser crystallization devices face inefficiencies due to energy loss and vertical line stain defects caused by reflected laser beams re-entering the substrate, leading to reduced crystallization efficiency and increased sensitivity to process conditions.
Innovation Solution
A laser crystallization device with a re-reflector and beam width changer, comprising a prism or plane mirrors, and asymmetrical lenses, alters the path and width of reflected laser beams to enhance energy efficiency and reduce overlap, thereby improving crystallization efficiency and minimizing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the reflected laser beam is allowed to re-enter the substrate, then the crystallization efficiency is improved through energy combination, but vertical line stain defects occur due to beam overlap
Solution Approach 1:
The patent applies asymmetry by using an asymmetrical lens (cylinder or half-cylinder lens) to change the beam width in only one direction (the width direction) while maintaining the other dimension. This asymmetric modification of the reflected beam allows it to re-enter the substrate at a different position and with different dimensions, preventing vertical line stain defects while still utilizing the reflected beam energy for crystallization enhancement
Solution Approach 2:
The patent changes the spatial dimensions of the reflected beam by using optical elements (asymmetrical lens, beam expander) to modify the beam width and position. The reflected beam is made to re-enter the substrate in a different spatial configuration (different position and/or different beam width), which prevents harmful overlap while maintaining energy utilization benefits
2Object-affected harmful factors
If the beam width of the reflected laser beam is reduced to prevent overlap, then vertical line stain defects are reduced, but the energy utilization efficiency decreases
Solution Approach 1:
The patent applies local quality by selectively modifying only the width dimension of the reflected beam using an asymmetrical lens, while preserving the intensity and other properties in the other dimension. This localized modification prevents beam overlap and vertical line stain defects in the width direction while maintaining energy utilization efficiency through proper positioning and intensity control
3Speed
If the laser beam intensity is increased to improve crystallization, then the crystallization speed increases, but the process becomes more sensitive to energy density fluctuations
Solution Approach 1:
The patent applies continuity of useful action by utilizing both the original laser beam and the reflected laser beam for crystallization processing. The reflected beam is redirected to act on the substrate in a complementary manner, providing continuous and sustained crystallization action that reduces sensitivity to energy density fluctuations while maintaining high crystallization speed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device increases crystallization efficiency by optimizing beam path and width, reducing vertical line stain defects, and enhancing process margin, making it less sensitive to energy density fluctuations.
Implementation Method 1
a re-reflector positioned in a path of a second laser beam reflected from the layer to be treated, where the re-reflector changes a path of the second laser beam in a direction toward the substrate
Implementation Method 2
a beam width changer positioned in the path of the second laser beam, which is changed by the re-reflector, where the beam width changer changes a width of the second laser beam
Implementation Method 3
a laser beam generator which provides a first laser beam onto a substrate, in which a layer to be treated is disposed
Implementation Method 4
a laser crystallization device used in the manufacturing process of an indication device
Data Source
AI summary
A laser crystallization device includes a laser beam generator which provides a first laser beam onto a substrate, on which a layer to be treated is disposed, a re-reflector positioned in a path of a second laser beam reflected from the layer to be treated, where the re-reflector changes a path of the second laser beam in a direction toward the substrate, and a beam width changer positioned in the path of the second laser beam which is changed by the re-reflector, where the beam width changes a width of the second laser beam in a way such that a third laser beam having a width different from the width of the second laser beam re-enters the substrate.