Semiconductor Laser Bonding Material Segmentation
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Solution Overview
Problem
As semiconductor laser elements increase in output power, the bonding material tends to adhere to the side surfaces due to its thickness, leading to potential short circuits between the p-type and n-type semiconductor layers.
Innovation Solution
The semiconductor laser device incorporates a submount and bonding material with specific width and thickness configurations, including outer regions that are spaced apart from the semiconductor laser element's side surfaces, and a manufacturing process involving multiple heating and cooling steps to optimize bonding without adhering to the side surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the bonding material is made thicker to ensure sufficient bonding surface area, then the bonding strength and heat dissipation are improved, but the bonding material adheres to the side surfaces of the semiconductor laser element causing short circuits
Solution Approach 1:
The bonding material is divided into multiple layers: a first bonding material layer with larger width extending beyond the side surfaces, and a second bonding material layer with smaller width contained within the first layer. This segmentation allows the outer first layer to prevent adhesion to side surfaces while the inner second layer provides sufficient bonding area for strength and heat dissipation.
Solution Approach 2:
Different regions of the bonding material structure are given different properties: the first bonding material layer has larger width for coverage and protection, while the second bonding material layer has optimized width for bonding performance. This local differentiation resolves the contradiction between preventing side surface adhesion and ensuring bonding strength.
2Power
If the semiconductor laser element size is increased to achieve higher output power, then the output power is improved, but the bonding material thickness increases causing adhesion to side surfaces
Solution Approach 1:
The bonding material is segmented into first and second layers with different width characteristics. The first layer's larger width prevents adhesion to side surfaces even when the semiconductor laser element is large, while the second layer maintains appropriate bonding area.
Solution Approach 2:
The bonding material structure is extended into the width dimension by creating a multi-layer configuration where the first layer extends beyond the element width. This dimensional approach allows prevention of side surface adhesion while maintaining bonding performance despite increased element size for higher power.
3Reliability
If the bonding material is made thinner to prevent adhesion to side surfaces, then short circuit prevention is improved, but the bonding surface area is reduced affecting heat dissipation
Solution Approach 1:
The bonding material is divided into first and second layers where the first layer provides coverage for preventing side surface adhesion, and the second layer provides sufficient bonding area for heat dissipation. This segmentation allows both requirements to be satisfied simultaneously.
Solution Approach 2:
The first bonding material layer serves multiple functions: it prevents adhesion to side surfaces and provides a base for the second layer. The second layer provides both bonding strength and adequate surface area for heat dissipation. This multi-functional design resolves the contradiction between preventing adhesion and ensuring heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively inhibits bonding material from adhering to the side surfaces of the semiconductor laser element, preventing short circuits and ensuring reliable operation while maintaining sufficient bonding surface area for heat dissipation.
Implementation Method 1
bonding material that bonds the submount and the semiconductor laser element
Implementation Method 2
semiconductor laser element...emit laser light
Data Source
AI summary
A semiconductor laser device includes a submount, a semiconductor laser element, and a bonding material. The semiconductor laser element includes a substrate and a layered structure, and is disposed with the layered structure facing the submount. A waveguide extending in a first direction parallel to the main surface of the substrate is formed in the layered structure. The bonding material includes an inner region bonded to the semiconductor laser element and one outer region located outward of the inner region. The one outer region is spaced apart from one side surface of the semiconductor laser element. Width A of the semiconductor laser element and width B of the one outer region in a second direction perpendicular to the first direction and parallel to the main surface of the substrate satisfy B≥A/4.