Laser Bonding Apparatus for Semiconductor Devices
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Solution Overview
Problem
Existing semiconductor bonding methods, such as contact bonding, face challenges with misalignment, contamination, and warpage issues, and are not suitable for high-volume production due to the need for manual handling and high-temperature processes.
Innovation Solution
A laser bonding apparatus that uses a chamber with a transmissive window to apply elevated pressure and temperature to semiconductor devices using a laser, allowing for non-contact bonding and reducing warpage, while maintaining a clean environment by isolating the laser generator outside the chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact bonding is used to bond semiconductor devices, then bonding can be achieved, but misalignment and warpage issues occur
Solution Approach 1:
The patent replaces the mechanical contact bonding system with a laser-based heating system. The laser heats the bonding interface non-contactly, eliminating mechanical pressure application that causes misalignment and warpage. The bonding is achieved through localized thermal activation of the adhesive or solder without physical contact between bonding tools and the semiconductor devices.
Solution Approach 2:
The patent introduces an intermediary medium (gas atmosphere in the chamber) between the laser and the semiconductor devices. This gas medium allows laser energy to reach the bonding interface while maintaining a controlled environment that prevents oxidation and contamination, enabling reliable bonding without direct mechanical contact.
2Reliability
If manual handling and high-temperature processes are used in bonding, then bonding can be achieved, but the method is not suitable for high-volume production
Solution Approach 1:
The patent replaces manual handling and conventional heating systems with an automated laser bonding system. The laser can be precisely positioned and controlled to bond multiple devices sequentially or simultaneously without manual intervention, enabling high-volume production while maintaining consistent bonding quality through automated process control.
Solution Approach 2:
The laser bonding process uses periodic or pulsed laser irradiation to heat the bonding interface. This allows for precise temperature control and rapid heating cycles that can be repeated quickly for high-volume production, replacing slow conventional high-temperature processes with faster, more controllable thermal cycles.
3Temperature
If the laser generator is placed inside the chamber, then direct heating can be achieved, but contamination risks increase
Solution Approach 1:
The patent extracts the laser generator from the chamber environment and positions it outside. The laser beam passes through the chamber window to reach the bonding interface, eliminating the risk of laser contamination from chamber atmosphere or outgassing materials. This separation maintains heating efficiency while protecting the chamber environment from laser-related contamination.
Solution Approach 2:
The chamber window serves as an intermediary that transmits laser energy from the external generator to the internal bonding interface. This window allows thermal energy transfer while maintaining physical separation between the laser generator and the chamber environment, preventing contamination while preserving heating efficiency.
4Reliability
If conventional bonding methods are used, then bonding can be achieved, but cleaning downtime is required frequently
Solution Approach 1:
The patent replaces conventional bonding methods that generate contamination (mechanical contact, high-temperature oxidation) with laser-based bonding in a controlled gas atmosphere. This eliminates the generation of contaminants that would require frequent cleaning, reducing cleaning downtime while maintaining reliable bonding quality through controlled thermal processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient, high-volume bonding of semiconductor devices with reduced warpage and contamination risks, improving production efficiency and reducing costs by allowing simultaneous heating of multiple devices and minimizing downtime for cleaning.
Implementation Method 1
a laser generator arranged outside the chamber and configured to irradiate the workpiece accommodated in the chamber, through the transmissive window
Implementation Method 2
a gas supply conduit connected to the chamber and configured to supply a gas at an elevated pressure relative to a pressure outside of the chamber
Data Source
AI summary
A laser bonding apparatus, a method of bonding a plurality of semiconductor devices arranged on a main substrate of a workpiece, to the main substrate, and a method of manufacturing a semiconductor package, the laser bonding apparatus including a chamber having a transmissive window and in which a workpiece is accommodatable; a gas supply conduit connected to the chamber and configured to supply a gas at an elevated pressure relative to a pressure outside of the chamber; and a laser generator arranged outside the chamber and configured to irradiate the workpiece accommodated in the chamber, through the transmissive window.