Laser Bonding Semiconductor Substrates Preventing Thermal Damage
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Solution Overview
Problem
There is a need for a method to manufacture semiconductor devices that prevents characteristic deterioration during the bonding process of wafers or a wafer and a die, which is not effectively addressed by existing methods that involve heating the entire wafer.
Innovation Solution
A semiconductor device manufacturing method using an apparatus with a chamber, support structure, and a laser device, where a bonding structure comprising a first substrate, a second substrate, and a bonding metal layer is irradiated with a laser beam, utilizing adhesive layers with higher absorptivity to enhance heat transfer and prevent unwanted characteristic deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the entire wafer is heated to bond substrates, then bonding is achieved, but characteristic deterioration occurs in non-bonding regions
Solution Approach 1:
The patent applies local quality by using a laser beam to heat only the specific bonding region between substrates rather than heating the entire wafer. The adhesive layer is designed with selective laser absorptivity to concentrate thermal energy precisely where bonding is needed, preventing characteristic deterioration in non-bonding regions while achieving reliable bonding at the target location.
Solution Approach 2:
The patent segments the heating process by introducing an adhesive layer with specific laser absorptivity properties that selectively absorbs laser energy at the bonding interface. This creates a localized heating zone separated from the rest of the wafer, allowing bonding to occur in discrete regions without affecting the entire substrate structure.
2Manufacturing precision
If selective area heating is used to prevent characteristic deterioration, then bonding precision is improved, but manufacturing complexity increases
Solution Approach 1:
The patent changes the optical parameter of the adhesive layer by selecting materials with specific laser absorptivity characteristics. This parameter change enables selective heating without requiring complex apparatus modifications, as the material property itself provides the precision needed for localized bonding while maintaining manufacturing simplicity.
Solution Approach 2:
The adhesive layer serves as an intermediary between the laser beam and the substrates. It mediates the energy transfer by selectively absorbing laser radiation and converting it to thermal energy at the bonding interface, thereby achieving precise heating control without requiring complex focusing or positioning systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively bonds the substrates while preventing characteristic deterioration in other regions, enabling increased data processing capacity and reduced volume without the need for heating the entire wafer.
Implementation Method 1
an adhesive layer having an absorptivity of a laser beam in a first wavelength band that is higher than the metal layer
Implementation Method 2
irradiating a laser beam to the bonding structure using the laser device
Data Source
AI summary
A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device which uses an apparatus for manufacturing the semiconductor device including: a chamber, a support structure provided inside the chamber, and configured to support a bonding structure that comprises a first substrate structure, a second substrate structure, and a bonding metal layer provided between the first substrate structure and the second substrate structure, and a laser device which is provided above the chamber, the semiconductor device manufacturing method comprising: irradiating a laser beam to the bonding structure using the laser device.