Laser Bonding Cover Structure for Die and Substrate Warpage
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Solution Overview
Problem
Laser assisted bonding processes in semiconductor manufacturing induce warpage issues in semiconductor dies and substrates due to direct heat radiation, affecting device performance.
Innovation Solution
A bonding apparatus with a jig, top cover, and laser source is used, where the top cover includes a clamping component and a light pervious component to press the substrate and semiconductor die against the jig, allowing a laser beam to pass through and reduce warpage while ensuring sufficient heat for bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a large amount of heat is directly radiated to the semiconductor die and substrate during laser assisted bonding, then bonding efficiency is improved, but warpage issues occur and device performance deteriorates
Solution Approach 1:
A top cover is introduced as an intermediary component between the laser source and the semiconductor die/substrate. The top cover allows laser beams to pass through while providing mechanical support and heat distribution, preventing direct concentrated heating that causes warpage. This mediator enables bonding efficiency while controlling warpage through its structural presence and heat dissipation properties.
Solution Approach 2:
The patent changes the thermal parameters by introducing a top cover that modifies heat distribution patterns. Instead of direct concentrated heat radiation causing localized overheating and warpage, the top cover distributes heat more evenly across the substrate and semiconductor die, maintaining bonding efficiency while reducing warpage through altered thermal parameters.
2Manufacturing precision
If the substrate and semiconductor die are clamped to reduce warpage, then warpage control is improved, but heat transfer efficiency may deteriorate
Solution Approach 1:
The top cover serves as a thermal intermediary that facilitates heat transfer from the laser source to the substrate and semiconductor die while maintaining clamping pressure. It acts as a heat conduction path that ensures efficient energy transfer despite the mechanical constraint, preventing heat transfer deterioration that would otherwise occur with direct clamping.
Solution Approach 2:
The top cover applies localized clamping pressure specifically at regions where warpage control is most critical, while maintaining laser beam transmission paths with sufficient heat transfer capability. This local quality approach ensures warpage control without compromising overall heat transfer efficiency for bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively reduces warpage of both the semiconductor die and substrate, improving bonding quality and device performance by controlling heat distribution and minimizing displacement during the bonding process.
Implementation Method 1
a light pervious component mounted within the opening and configured for covering the semiconductor die to reduce warpage of the semiconductor die and allowing a laser beam to pass therethrough to the semiconductor die
Implementation Method 2
a laser source configured for emitting a laser beam that passes through the light pervious component to the semiconductor die
Implementation Method 3
a laser source configured for emitting a laser beam that passes through the light pervious component to the semiconductor die
Data Source
AI summary
A bonding apparatus is provided, which comprises: a jig configured for supporting a substrate at its periphery, wherein the substrate has a semiconductor die mounted thereon; a top cover operably attached to the jig and configured for covering the substrate and the semiconductor die, wherein the top cover comprises: a clamping component operably attached to the jig and configured for covering a portion of the substrate to reduce warpage of the substrate, wherein the clamping component comprises an opening configured for accommodating and exposing the semiconductor die; and a light pervious component mounted within the opening and configured for covering the semiconductor die to reduce warpage of the semiconductor die and allowing a laser beam to pass therethrough to the semiconductor die when the top cover is attached to the jig; and a laser source configured for emitting a laser beam that passes through the light pervious component.