Laser Capping Structure for Semiconductor Heat Distribution Control

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Solution Overview

Problem

The challenge in semiconductor device manufacturing is controlling heat distribution and transfer during laser heat treatment, leading to property changes, deterioration, and substance damage due to unwanted reactions, especially as device integration improves and sizes decrease.

Innovation Solution

A laser heat treatment method involving a capping substance layer with a non-conductive and conductive layer structure, including a reaction-suppressing layer, to control heat distribution and cooling behavior, preventing unwanted reactions and maintaining excellent heat treatment characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If laser heat treatment is performed on the substrate surface, then temperature control and localized heating are improved, but heat distribution control and cooling behavior control become difficult

Engineering Contradiction:

Improvetemperature controlVSAvoidheat distribution control

Core Design Contradiction:

TemperatureVSManufacturing precision

Solution Approach 1:

A capping layer is introduced as an intermediary between the laser and the target substance layer. This capping layer mediates the heat transfer process, enabling controlled heat distribution and cooling behavior while maintaining the localized heating advantage of laser treatment.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The optical and thermal parameters of the capping layer are optimized to control heat absorption, distribution, and cooling rates. By adjusting the composition and thickness of the capping layer, precise control over heat treatment parameters is achieved without directly modifying the laser parameters.

Inventive Principle:

Principle #35Parameter changes

2Productivity

If laser heat treatment is performed on the substrate surface, then processing speed and localized treatment are improved, but unwanted reactions between substances occur causing property deterioration

Engineering Contradiction:

Improveprocessing speedVSAvoidproperty deterioration

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The capping layer serves as a protective intermediary that prevents direct interaction between the target substance layer and the environment or other substances during rapid laser heating, thereby preventing unwanted chemical reactions while maintaining high processing speed.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The capping layer is formed in advance on the target substance layer before laser treatment. This preliminary action prepares the structure for controlled heat treatment, preventing unwanted reactions during the rapid heating process.

Inventive Principle:

Principle #10Preliminary action

3Device complexity

If a single-layer capping structure is used, then process simplicity is maintained, but heat distribution and cooling behavior control are insufficient

Engineering Contradiction:

Improvecapping structure complexityVSAvoidheat treatment control

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The capping structure is segmented into multiple functional layers (non-conductive layer and conductive layer) with distinct roles. The non-conductive layer controls heat distribution while the conductive layer manages cooling behavior, achieving precise heat treatment control through functional segmentation.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The capping structure uses composite materials with different thermal and optical properties. The combination of non-conductive and conductive materials creates a multi-functional capping layer that simultaneously controls heat distribution and cooling behavior.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables precise control of heat distribution and cooling speed, reducing defects and improving the performance and uniformity of semiconductor devices while minimizing substance damage and property changes.

Implementation Method 1

performing heat treatment on the target substance layer by irradiating a laser to the capping substance layer

Methodology Applied

Scientific EffectLaser heating: Laser

Implementation Method 2

heat transfer characteristics

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

non-conductive substance layer

Methodology Applied

Scientific EffectThermal insulation: Thermal Insulation

Implementation Method 4

conductive substance layer

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 5

reaction-suppressing layer disposed between the target substance layer and the conductive substance layer... configured to suppress substance diffusion and reaction

Methodology Applied

Scientific EffectDiffusion barrier: Diffusion Barrier

Data Source

PatentUS20250273467A1Laser heat treatment method and manufacturing method of electronic device using the same

Publication Date: 2025.08.28 RNR LAB INC

AI summary

The present disclosure provides a laser heat treatment method including a step for providing a substrate structure including a target substance layer to be heat treated, a step for forming a capping substance layer having a multi-layer structure including a non-conductive substance layer and a conductive substance layer on the target substance layer, and a step for performing heat treatment on the target substance layer by irradiating a laser to the capping substance layer.