Laser Catalyst Cleaning to Mitigate Long-Term Energy Decay
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Solution Overview
Problem
Existing EUV lithography systems experience significant long-term energy decay in laser power, leading to costly and time-consuming replacements, as contamination builds up on the catalyst surfaces within the laser generators, reducing efficiency and operational lifespan.
Innovation Solution
Implementing a hydrogen-doped mixing gas to react with and remove SiO2 contamination layers on the catalyst surfaces during online and offline cleaning processes, using a computer-controlled system to monitor and initiate cleaning when necessary, thereby maintaining laser power and extending the EUV generation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a high-power laser beam is focused onto fuel droplet targets to generate EUV light, then EUV emission is achieved, but long-term energy decay occurs due to contamination buildup on catalyst surfaces
Solution Approach 1:
The system performs preliminary cleaning actions by introducing hydrogen-doped mixing gas to the catalyst surfaces before contamination significantly degrades laser power. The computer-controlled system monitors catalyst condition and initiates cleaning processes proactively, preventing the buildup of SiO2 contamination layers that would otherwise cause energy decay and power instability.
Solution Approach 2:
Hydrogen-doped mixing gas serves as an intermediary substance that reacts with SiO2 contamination on catalyst surfaces. The hydrogen in the mixing gas chemically interacts with the contamination layers, removing them from the catalyst surfaces and restoring laser efficiency without requiring direct mechanical intervention or system shutdown.
2Productivity
If laser operation continues without maintenance, then productivity is maintained, but contamination builds up on catalyst surfaces reducing efficiency
Solution Approach 1:
The cleaning system operates continuously or periodically without interrupting EUV generation productivity. The computer-controlled system manages cleaning cycles that can occur during low-demand periods or between production runs, ensuring catalyst surfaces remain clean and energy-efficient while maintaining continuous EUV output when needed.
Solution Approach 2:
The laser system performs self-maintenance by automatically introducing hydrogen-doped mixing gas to clean its own catalyst surfaces. The computer-controlled system monitors the laser's own performance and initiates cleaning when contamination is detected, enabling the system to maintain its own efficiency without external intervention or manual maintenance.
3Reliability
If replacement or repair of lasers is performed, then power decay is reset, but the process is time-consuming and expensive
Solution Approach 1:
Instead of replacing entire laser systems when contamination occurs, the invention uses a low-cost cleaning approach with hydrogen-doped mixing gas. This disposable cleaning method restores catalyst performance without the need for expensive laser replacement or complex repair procedures, significantly reducing both time and cost while maintaining reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively stabilizes the EUV laser power, reducing decay rates and maintaining production efficiency by continuously cleaning the catalyst surfaces, thus preventing premature degradation and extending the operational life of EUV lithography systems.
Implementation Method 1
a hydrogen-doped mixing gas to react with and remove SiO2 contamination layers on the catalyst surfaces
Implementation Method 2
By focusing a high-power laser beam, as generated by a carbon dioxide (CO2) laser and the like, onto small fuel droplet targets in order to transition it into a highly-ionized LPP
Implementation Method 3
transition it into a highly-ionized LPP
Implementation Method 4
This plasma emits EUV light with a peak maximum emission of about 13.5 nm or smaller
Data Source
AI summary
An apparatus for manufacturing semiconductors includes a power amplifier to power a laser, a catalyst disposed in the power amplifier, an inlet port, and an exhaust port. The inlet port introduces a mixing gas to an interior of the power amplifier during a cleaning operation so that the mixing gas contacts a surface of the catalyst having a build-up thereon. The mixing gas reacts with and removes the build-up by generating gaseous by-products. The exhaust port removes the gaseous by-products from the power amplifier.


