Edge-Emitting Laser Chip Layout for Bonding Stress Relief
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Solution Overview
Problem
The junction-down method for die bonding in semiconductor laser devices can lead to a decrease in reliability due to direct loading on the light-emitting section, causing mechanical and optical stress.
Innovation Solution
The semiconductor laser device design includes m laser resonators positioned off-center in the x-axis direction relative to the load position during die bonding, with a stacked growth layer comprising conductive cladding layers and a light-emitting layer, and the use of a wide electrode for strong bonding, reducing direct load on the resonators and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the light-emitting section is mounted in the center of the semiconductor laser chip, then the optical alignment is improved, but the laser resonator is subjected to direct bonding load causing mechanical stress
Solution Approach 1:
The patent separates the functions of optical alignment and mechanical bonding by creating distinct zones on the chip. The light-emitting section is positioned in a light-emitting area that is offset from the center, while the bonding area is designated for mechanical attachment, thus achieving both optical precision and mechanical stress relief
Data Source
AI summary
A semiconductor laser device includes a submount and an edge-emitting semiconductor laser chip mounted to the submount by a junction-down method. The semiconductor laser chip includes a semiconductor substrate, a stacked growth layer in which m (m≥1) laser resonators are formed, m P electrodes, and an N electrode. When a beam emission direction is denoted as a z-axis, a direction of the thickness of the semiconductor substrate as a y-axis, and a direction orthogonal to the z-axis and the y-axis as an x-axis, the m laser resonators are located in an area of the stacked growth layer except directly under a center of the second face of the semiconductor substrate in the x-axis direction. More preferably, the m laser resonators are located on the side opposite to the center of the second face of the semiconductor substrate when viewed from the center of the first face thereof.