Laser Apparatus Wavelength Chirping Control for EUV Amplification
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in generating extreme ultraviolet (EUV) light with the required precision and efficiency for microfabrication at feature sizes below 32 nm, particularly in ensuring the wavelength chirping range of laser beams overlaps the gain bandwidth of amplification media to achieve optimal amplification.
Innovation Solution
A laser apparatus comprising a master oscillator, amplifiers, and a controller that adjusts the output wavelength of pulsed laser beams to ensure the wavelength chirping range overlaps the gain bandwidth of the CO2 gas gain medium, allowing for efficient amplification and EUV light generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the wavelength chirping range of the pulsed laser beam is controlled to overlap the gain bandwidth of the amplifier, then amplification efficiency is improved, but device complexity increases due to the need for precise control of laser parameters
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the wavelength chirping range of the pulsed laser beam to match the gain bandwidth of the amplifier. The controller modifies laser parameters such as pulse width, repetition rate, and wavelength tuning to ensure optimal overlap between the chirping range and gain bandwidth, thereby maximizing amplification efficiency without requiring complex hardware modifications
Solution Approach 2:
The patent implements feedback control through a controller that monitors the wavelength chirping range and adjusts laser parameters in real-time to maintain optimal overlap with the amplifier's gain bandwidth. This closed-loop control system automatically compensates for variations and ensures consistent amplification efficiency while managing system complexity through intelligent control algorithms
2Use of energy by moving object
If the pulse width of the laser beam is increased to generate long-pulse-width EUV light, then energy output is improved, but manufacturing precision may deteriorate due to longer exposure time
Solution Approach 1:
The patent employs periodic pulsed laser action with optimized pulse widths and repetition rates. By using a series of controlled pulses rather than continuous irradiation, the system accumulates energy output over time while maintaining precision through the periodic nature of the pulses, allowing the target material to respond to each pulse individually
Solution Approach 2:
The patent applies dynamics by making the laser parameters adjustable and adaptive. The pulse width, repetition rate, and wavelength are dynamically controlled to optimize both energy output and manufacturing precision for different fabrication requirements, allowing the system to adapt between long-pulse high-energy mode and shorter-pulse high-precision mode as needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-energy, long-pulse-width EUV light, improving the amplification efficiency and synchronization with droplet generation, thereby supporting advanced semiconductor fabrication.
Implementation Method 1
a wavelength chirping range of the pulsed laser beam from the master oscillator
Implementation Method 2
at least one amplifier configured to amplify the pulsed laser beam from the master oscillator, the at least one amplifier being configured to include at least one gain bandwidth
Implementation Method 3
a controller for controlling a parameter affecting an output wavelength of the pulsed laser beam from the master oscillator such that a wavelength chirping range of the pulsed laser beam from the master oscillator overlaps at least a part of the at least one gain bandwidth
Data Source
AI summary
A laser apparatus may include: a master oscillator configured to output a pulsed laser beam at a repetition rate, the master oscillator including at least one semiconductor laser apparatus; at least one amplifier configured to amplify the pulsed laser beam from the master oscillator, the at least one amplifier being configured to include at least one gain bandwidth; and a controller for controlling a parameter affecting an output wavelength of the pulsed laser beam from the master oscillator such that a wavelength chirping range of the pulsed laser beam from the master oscillator overlaps at least a part of the at least one gain bandwidth.