Semiconductor Laser Contact Layer Layout for Uniform Light Emission
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor laser devices face challenges in achieving uniform light intensity across the light emitter, leading to potential noise in laser systems due to side peaks in the far field pattern, which can decrease measurement accuracy.
Innovation Solution
The semiconductor laser device incorporates a contact layer with a thickness of at least 2 μm and an insulation coverage ratio of less than or equal to 10%, ensuring current distribution to the ends of the light emitter, thereby reducing side peaks and enhancing light intensity uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional light emitter structure is used, then device simplicity is maintained, but light intensity uniformity deteriorates due to side peaks in far field pattern
Solution Approach 1:
The light emitter is divided into multiple independent light emitting units arranged in an array. Each unit has its own light emitting region separated by insulating films, allowing independent control of current distribution. This segmentation enables uniform light intensity across the entire emitter by preventing current concentration at ends, thereby resolving the contradiction between maintaining structural simplicity and achieving light intensity uniformity.
2Measurement precision
If current is concentrated at ends of light emitter, then ease of current injection is improved, but measurement precision deteriorates due to side peaks in far field pattern
Solution Approach 1:
Insulating films are introduced as intermediary elements between adjacent light emitting units. These films prevent direct current flow between units and force current to distribute uniformly across all units. This intermediary structure eliminates side peaks in the far field pattern, improving measurement accuracy while maintaining ease of current injection through the array structure.
3Manufacturing precision
If insulation coverage ratio is increased, then light intensity uniformity is improved, but current distribution to ends deteriorates
Solution Approach 1:
The insulating films are strategically positioned only between adjacent light emitting units where current concentration problems occur, rather than covering the entire light emitter surface. This localized insulation approach achieves light intensity uniformity by preventing side peaks while maintaining adequate current distribution to the ends of the light emitter through the uncovered regions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in a more uniform light emission across the light emitter, reducing the likelihood of noise in the laser light and improving measurement accuracy by minimizing side peaks in the far field pattern.
Implementation Method 1
The semiconductor laser device includes a contact layer having a thickness of at least 2 μm and an insulation coverage ratio of less than or equal to 10%
Data Source
AI summary
A semiconductor laser device includes a semiconductor substrate, a light emitting unit, a contact layer, an insulating film, and a first electrode. The contact layer has an electrode connection surface facing the Z direction. The insulating film has a pair of contact layer covering parts that cover both end regions of the electrode connection surface in the X direction, and a first opening that exposes a portion of the electrode connection surface. The first electrode is connected to the electrode connection surface exposed from the first opening. The insulation coverage factor, which is the ratio of the width of the pair of contact layer covering parts in the X direction to the width of the electrode connection surface in the X direction, is 10% or less. The thickness of the contact layer in the Z direction is 2 μm or greater.